A Comparative Study on TID Influenced Lateral Diffusion of Group 11 Metals into GexS1−x and GexSe1−x Systems: A Flexible Radiation Sensor Development Perspective

M. Mitkova

doi:10.1109/TNS.2017.2684782

A Comparative Study on TID Influenced Lateral Diffusion of Group 11 Metals into Ge_xS_1−x and Ge_xSe_1−x Systems: A Flexible Radiation Sensor Development Perspective

M. Mitkova

Electrical Engineering Department

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The impact of varying: 1) metals used to form contact electrodes and 2) chalcogenide glass atomic ratio/chemical composition on the performance of our recently developed flexible radiation detection sensors has been investigated. For electrodes, three group 11 elements (i.e., copper, silver, and gold) were used. For chalcogenide glass film, either Ge _x S _1-x or Ge _x Se _1-x was used where the atomic ratio of the chalcogen atoms (i.e., sulfide or selenide) was varied from device to device. Selenide systems with Ag electrodes were found to be very promising, since the limit of detection of the sensors showed clear dependence on the Se atomic ratio in the chalcogenide glass film. The other selenide and sulfide systems with different group 11 metal electrodes were not as suitable for the present lateral diffusion-based design due to either their control instability or very slow diffusion caused by γ irradiation from a ⁶⁰ Co source.

Original language	American English
Journal	Electrical and Computer Engineering Faculty Publications and Presentations
DOIs	https://doi.org/10.1109/TNS.2017.2684782
State	Published - 1 Aug 2017

Keywords

Chalcogenide glass (ChG)
dosimetry
flexible radiation sensor
gamma rays
lateral diffusion
limit of detection (LOD)

EGS Disciplines

Electrical and Computer Engineering

Access to Document

10.1109/TNS.2017.2684782License: Unspecified

http://dx.doi.org/10.1109/TNS.2017.2684782

Cite this

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title = "A Comparative Study on TID Influenced Lateral Diffusion of Group 11 Metals into GexS1−x and GexSe1−x Systems: A Flexible Radiation Sensor Development Perspective",

abstract = " The impact of varying: 1) metals used to form contact electrodes and 2) chalcogenide glass atomic ratio/chemical composition on the performance of our recently developed flexible radiation detection sensors has been investigated. For electrodes, three group 11 elements (i.e., copper, silver, and gold) were used. For chalcogenide glass film, either Ge x S 1-x or Ge x Se 1-x was used where the atomic ratio of the chalcogen atoms (i.e., sulfide or selenide) was varied from device to device. Selenide systems with Ag electrodes were found to be very promising, since the limit of detection of the sensors showed clear dependence on the Se atomic ratio in the chalcogenide glass film. The other selenide and sulfide systems with different group 11 metal electrodes were not as suitable for the present lateral diffusion-based design due to either their control instability or very slow diffusion caused by γ irradiation from a 60 Co source.",

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AB - The impact of varying: 1) metals used to form contact electrodes and 2) chalcogenide glass atomic ratio/chemical composition on the performance of our recently developed flexible radiation detection sensors has been investigated. For electrodes, three group 11 elements (i.e., copper, silver, and gold) were used. For chalcogenide glass film, either Ge x S 1-x or Ge x Se 1-x was used where the atomic ratio of the chalcogen atoms (i.e., sulfide or selenide) was varied from device to device. Selenide systems with Ag electrodes were found to be very promising, since the limit of detection of the sensors showed clear dependence on the Se atomic ratio in the chalcogenide glass film. The other selenide and sulfide systems with different group 11 metal electrodes were not as suitable for the present lateral diffusion-based design due to either their control instability or very slow diffusion caused by γ irradiation from a 60 Co source.

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