TY - JOUR
T1 - A disclination model for the twin-twin intersection and the formation of diamond-hexagonal silicon and germanium
AU - Müllner, P.
AU - Pirouz, P.
PY - 1997/8/15
Y1 - 1997/8/15
N2 - A twin-twin intersection mechanism for twinning in semiconductors is presented. The mechanism is based on the disclination character of twins and accounts for all experimental findings including the diamond-hexagonal structure, the twin/matrix orientation relationship, and the shape of the intersected volume, as well as irregularities within the transformed region such as stacking faults and diamond cubic bands. The formation of long narrow diamond-hexagonal bands is proposed to be due to a similar mechanism where a second-order twin penetrates into the matrix.
AB - A twin-twin intersection mechanism for twinning in semiconductors is presented. The mechanism is based on the disclination character of twins and accounts for all experimental findings including the diamond-hexagonal structure, the twin/matrix orientation relationship, and the shape of the intersected volume, as well as irregularities within the transformed region such as stacking faults and diamond cubic bands. The formation of long narrow diamond-hexagonal bands is proposed to be due to a similar mechanism where a second-order twin penetrates into the matrix.
KW - Deformation twinning
KW - Germanium
KW - Silicon
KW - Twin-twin intersection
UR - http://www.scopus.com/inward/record.url?scp=0001520303&partnerID=8YFLogxK
U2 - 10.1016/s0921-5093(97)00058-0
DO - 10.1016/s0921-5093(97)00058-0
M3 - Article
AN - SCOPUS:0001520303
SN - 0921-5093
VL - 233
SP - 139
EP - 144
JO - Materials Science and Engineering: A
JF - Materials Science and Engineering: A
IS - 1-2
ER -