TY - GEN
T1 - A low-power orthogonal current-reuse amplifier for parallel sensing applications
AU - Johnson, Ben
AU - DeTomaso, David
AU - Molnar, Alyosha
PY - 2010
Y1 - 2010
N2 - We demonstrate a low-noise CMOS amplifier array using orthogonal bias current-reuse to improve fundamental noise-power trade-offs. The architecture presented uses stacking to share bias current among the input differential pairs of four amplifiers. By using the output drain currents of each differential pair as tail currents for the next stage, we save bias current. By arranging the stacked differential pairs appropriately, we generate 16 output currents that encode the original inputs in a linearly independent (orthogonal) fashion. These outputs are then recombined in much lower power output stages to reconstruct amplified versions of the inputs. Our design was built in standard 130nm CMOS and has a noise efficiency factor (NEF) of 2.7, close to the lowest published for a differential amplifier. However, amortizing bias current across the 4 parallel amplifier paths in the NEF calculation yields an effective NEF of 1.54. The input-referred noise ranges from 14.5 μVrms to 17.4 μVrms between amplifiers in the stack over bandwidths of 426 kHz to 530.2 kHz while consuming a total power of 19.6 μW, or 4.9 μW per path. Orthogonal biasing avoids cross-talk between stacked amplifier paths, providing isolation of 37 dB or better.
AB - We demonstrate a low-noise CMOS amplifier array using orthogonal bias current-reuse to improve fundamental noise-power trade-offs. The architecture presented uses stacking to share bias current among the input differential pairs of four amplifiers. By using the output drain currents of each differential pair as tail currents for the next stage, we save bias current. By arranging the stacked differential pairs appropriately, we generate 16 output currents that encode the original inputs in a linearly independent (orthogonal) fashion. These outputs are then recombined in much lower power output stages to reconstruct amplified versions of the inputs. Our design was built in standard 130nm CMOS and has a noise efficiency factor (NEF) of 2.7, close to the lowest published for a differential amplifier. However, amortizing bias current across the 4 parallel amplifier paths in the NEF calculation yields an effective NEF of 1.54. The input-referred noise ranges from 14.5 μVrms to 17.4 μVrms between amplifiers in the stack over bandwidths of 426 kHz to 530.2 kHz while consuming a total power of 19.6 μW, or 4.9 μW per path. Orthogonal biasing avoids cross-talk between stacked amplifier paths, providing isolation of 37 dB or better.
UR - http://www.scopus.com/inward/record.url?scp=78650386139&partnerID=8YFLogxK
U2 - 10.1109/ESSCIRC.2010.5619839
DO - 10.1109/ESSCIRC.2010.5619839
M3 - Conference contribution
AN - SCOPUS:78650386139
SN - 9781424466641
T3 - ESSCIRC 2010 - 36th European Solid State Circuits Conference
SP - 318
EP - 321
BT - ESSCIRC 2010 - 36th European Solid State Circuits Conference
T2 - 36th European Solid State Circuits Conference, ESSCIRC 2010
Y2 - 14 September 2010 through 16 September 2010
ER -