Adsorption-Controlled Growth of BiVO4 by Molecular-Beam Epitaxy

D. A. Hillsberry; D. A. Tenne; S. Stoughton; M. Showak; Q. Mao; P. Koirala; S. Sallis; L. F. Kourkoutis; K. Nguyen; L. F.J. Piper; N. J. Podraza; D. A. Muller; C. Adamo; D. G. Schlom

doi:10.1063/1.4824041

Adsorption-Controlled Growth of BiVO₄ by Molecular-Beam Epitaxy

D. A. Hillsberry, D. A. Tenne, S. Stoughton, M. Showak, Q. Mao, P. Koirala, S. Sallis, L. F. Kourkoutis, K. Nguyen, L. F.J. Piper, N. J. Podraza, D. A. Muller, C. Adamo, D. G. Schlom

Physics Department

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

Single-phase epitaxial films of the monoclinic polymorph of BiVO 4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO 4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO 4 with an atomically abrupt interface and orientation relationship (001) BiVO 4 &spar; (001) YSZ with [100] BiVO 4 &spar; [100] YSZ . Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV.

Original language	American English
Article number	042112
Journal	APL Materials
Volume	1
Issue number	4
DOIs	https://doi.org/10.1063/1.4824041
State	Published - 1 Oct 2013

Keywords

band gap
epitaxy
polymorphism
thin films
x-ray diffraction

EGS Disciplines

Physics

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Cite this

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title = "Adsorption-Controlled Growth of BiVO4 by Molecular-Beam Epitaxy",

abstract = " Single-phase epitaxial films of the monoclinic polymorph of BiVO 4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO 4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO 4 with an atomically abrupt interface and orientation relationship (001) BiVO 4 &spar; (001) YSZ with [100] BiVO 4 &spar; [100] YSZ . Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV.",

keywords = "band gap, epitaxy, polymorphism, thin films, x-ray diffraction",

author = "Hillsberry, {D. A.} and Tenne, {D. A.} and S. Stoughton and M. Showak and Q. Mao and P. Koirala and S. Sallis and Kourkoutis, {L. F.} and K. Nguyen and Piper, {L. F.J.} and Podraza, {N. J.} and Muller, {D. A.} and C. Adamo and Schlom, {D. G.}",

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doi = "10.1063/1.4824041",

language = "American English",

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T1 - Adsorption-Controlled Growth of BiVO4 by Molecular-Beam Epitaxy

AU - Hillsberry, D. A.

AU - Tenne, D. A.

AU - Stoughton, S.

AU - Showak, M.

AU - Mao, Q.

AU - Koirala, P.

AU - Sallis, S.

AU - Kourkoutis, L. F.

AU - Nguyen, K.

AU - Piper, L. F.J.

AU - Podraza, N. J.

AU - Muller, D. A.

AU - Adamo, C.

AU - Schlom, D. G.

PY - 2013/10/1

Y1 - 2013/10/1

N2 - Single-phase epitaxial films of the monoclinic polymorph of BiVO 4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO 4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO 4 with an atomically abrupt interface and orientation relationship (001) BiVO 4 &spar; (001) YSZ with [100] BiVO 4 &spar; [100] YSZ . Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV.

AB - Single-phase epitaxial films of the monoclinic polymorph of BiVO 4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO 4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO 4 with an atomically abrupt interface and orientation relationship (001) BiVO 4 &spar; (001) YSZ with [100] BiVO 4 &spar; [100] YSZ . Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV.

KW - band gap

KW - epitaxy

KW - polymorphism

KW - thin films

KW - x-ray diffraction

UR - https://scholarworks.boisestate.edu/physics_facpubs/139

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