TY - GEN
T1 - Alternate method of TDDB study for aluminum oxide using magneto-resistance
AU - Kumar, Santosh
AU - Knowlton, William B.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - A sensitive and accurate method/test to predict the lifetime of aluminum oxide used as a tunnel barrier in magnetic random access memory (MRAM) has been devised. The performance of magnetic tunnel junction is dependent upon the lifetime of aluminum oxide. Aluminum oxide has also been used in high dielectric constant gate dielectric MOS devices suitable for high speed applications. This method relies upon the measurement of anti parallel and parallel resistance of the magnetic stack in a tunnel magneto resistor using aluminum oxide as a tunnel barrier. This is a more sensitive method than the conventional methods.
AB - A sensitive and accurate method/test to predict the lifetime of aluminum oxide used as a tunnel barrier in magnetic random access memory (MRAM) has been devised. The performance of magnetic tunnel junction is dependent upon the lifetime of aluminum oxide. Aluminum oxide has also been used in high dielectric constant gate dielectric MOS devices suitable for high speed applications. This method relies upon the measurement of anti parallel and parallel resistance of the magnetic stack in a tunnel magneto resistor using aluminum oxide as a tunnel barrier. This is a more sensitive method than the conventional methods.
UR - http://www.scopus.com/inward/record.url?scp=84949219370&partnerID=8YFLogxK
U2 - 10.1109/IRWS.2002.1194263
DO - 10.1109/IRWS.2002.1194263
M3 - Conference contribution
AN - SCOPUS:84949219370
T3 - IEEE International Integrated Reliability Workshop Final Report
SP - 180
EP - 183
BT - 2002 IEEE International Integrated Reliability Workshop Final Report, IRW 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE International Integrated Reliability Workshop Final Report, IRW 2002
Y2 - 21 October 2002 through 24 October 2002
ER -