TY - GEN
T1 - Ambipolar nano-crystalline-silicon TFTs with submicron dimensions and reduced threshold voltage shift
AU - Subramaniam, Anand
AU - Cantley, Kurtis D.
AU - Chapman, Richard A.
AU - Chakrabarti, Bhaswar
AU - Vogel, Eric M.
PY - 2011
Y1 - 2011
N2 - Hydrogenated nano-crystalline-silicon (nc-Si) thin-film transistors (TFTs) are primary candidates for use in neuromorphic circuits and systems [1]. Such devices can be fabricated at low temperatures and over large areas, allowing cheap processing and three-dimensional integration with CMOS structures. The major drawbacks of nc-Si TFTs include low carrier mobility, threshold voltage (VT) shift under bias stress and lack of p-channel operation due to unintentional n-type doping by oxygen impurity present in the nc-Si layer [2]. We have fabricated nc-Si TFTs that minimize all the above drawbacks, and are thus well suited for use in neuromorphic applications.
AB - Hydrogenated nano-crystalline-silicon (nc-Si) thin-film transistors (TFTs) are primary candidates for use in neuromorphic circuits and systems [1]. Such devices can be fabricated at low temperatures and over large areas, allowing cheap processing and three-dimensional integration with CMOS structures. The major drawbacks of nc-Si TFTs include low carrier mobility, threshold voltage (VT) shift under bias stress and lack of p-channel operation due to unintentional n-type doping by oxygen impurity present in the nc-Si layer [2]. We have fabricated nc-Si TFTs that minimize all the above drawbacks, and are thus well suited for use in neuromorphic applications.
UR - http://www.scopus.com/inward/record.url?scp=84856276360&partnerID=8YFLogxK
U2 - 10.1109/DRC.2011.5994433
DO - 10.1109/DRC.2011.5994433
M3 - Conference contribution
AN - SCOPUS:84856276360
SN - 9781612842417
T3 - Device Research Conference - Conference Digest, DRC
SP - 99
EP - 100
BT - 69th Device Research Conference, DRC 2011 - Conference Digest
T2 - 69th Device Research Conference, DRC 2011
Y2 - 20 June 2011 through 22 June 2011
ER -