Anisotropy of optical phonons in semiconductor superlattices: Raman scattering experiments

D. A. Ténné; V. A. Gaǐsler; N. T. Moshegov; A. I. Toropov; A. P. Shebanin

doi:10.1134/1.567820

Anisotropy of optical phonons in semiconductor superlattices: Raman scattering experiments

D. A. Ténné, V. A. Gaǐsler, N. T. Moshegov, A. I. Toropov, A. P. Shebanin

Physics Department

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2 Scopus citations

Abstract

Experiments on Raman scattering in the "forward" geometry, permitting observation of anisotropy of the optical phonons, are performed on specially prepared short-period GaAs/AlAs superlattice structures with the substrates removed and the surfaces covered with an antireflective layer. The experimental data agree well with the computational results obtained for the angular dispersion of optical phonons in superlattices on the basis of a modified continuum model.

Original language	English
Pages (from-to)	53-58
Number of pages	6
Journal	JETP Letters
Volume	68
Issue number	1
DOIs	https://doi.org/10.1134/1.567820
State	Published - 1998

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abstract = "Experiments on Raman scattering in the {"}forward{"} geometry, permitting observation of anisotropy of the optical phonons, are performed on specially prepared short-period GaAs/AlAs superlattice structures with the substrates removed and the surfaces covered with an antireflective layer. The experimental data agree well with the computational results obtained for the angular dispersion of optical phonons in superlattices on the basis of a modified continuum model.",

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T2 - Raman scattering experiments

AU - Ténné, D. A.

AU - Gaǐsler, V. A.

AU - Moshegov, N. T.

AU - Toropov, A. I.

AU - Shebanin, A. P.

PY - 1998

Y1 - 1998

N2 - Experiments on Raman scattering in the "forward" geometry, permitting observation of anisotropy of the optical phonons, are performed on specially prepared short-period GaAs/AlAs superlattice structures with the substrates removed and the surfaces covered with an antireflective layer. The experimental data agree well with the computational results obtained for the angular dispersion of optical phonons in superlattices on the basis of a modified continuum model.

AB - Experiments on Raman scattering in the "forward" geometry, permitting observation of anisotropy of the optical phonons, are performed on specially prepared short-period GaAs/AlAs superlattice structures with the substrates removed and the surfaces covered with an antireflective layer. The experimental data agree well with the computational results obtained for the angular dispersion of optical phonons in superlattices on the basis of a modified continuum model.

UR - https://www.scopus.com/pages/publications/20444398176

U2 - 10.1134/1.567820

DO - 10.1134/1.567820

M3 - Article

AN - SCOPUS:20444398176

SN - 0021-3640

VL - 68

SP - 53

EP - 58

JO - JETP Letters

JF - JETP Letters

IS - 1

ER -

Anisotropy of optical phonons in semiconductor superlattices: Raman scattering experiments

Abstract

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