Atomic layer deposition for nano-fabrication of optoelectronic devices

E. Graugnard, J. S. King, D. P. Gaillot, C. J. Summers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We present recent investigations of the atomic layer deposition (ALD) of high transparency, high index, luminescent, and optoelectronic materials into self-assembled opal, lithographic, and biologically derived templates. Investigations on inverse opal based structures, which have the potential to sustain a complete photonic band gap, are presented and have been infiltrated with depositions of TiO2, Al2O3, ZnS:Mn and GaP. It is demonstrated that derivatives of the opal structure can be obtained by the use of a sacrificial buffer layer technique. Consequently, structures can be inverted, precisely replicated, and formed from composite or multilayered materials that allow a high degree of functionality. Additionally, this process enables temperature-sensitive polymer structures to be inverted by low temperature ALD to a high temperature compatible material that then serves as a high temperature template. Recent work is presented on the application of this technique to tune the properties of 2D photonic crystal slab waveguides and for the coating of biological scaffolds. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationECS Transactions - 2nd Symposium on Atomic Layer Deposition Applications
Pages191-205
Number of pages15
Edition15
DOIs
StatePublished - 2006
Event2nd Symposium on Atomic Layer Deposition Applications - 210th ECS Meeting - Cancun, Mexico
Duration: 29 Oct 20061 Nov 2006

Publication series

NameECS Transactions
Number15
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference2nd Symposium on Atomic Layer Deposition Applications - 210th ECS Meeting
Country/TerritoryMexico
CityCancun
Period29/10/061/11/06

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