Atomic Layer Processing of MoS2

Wesley Jen; John D. Hues; Jake Soares; Steven Letourneau; Matthew Lawson; Devika Choudhury; Anil U. Mane; Yu Lu; Yaqiao Wu; Steven M. Hues; Lan Li; Jeffrey W. Elam; Elton Graugnard

doi:10.1109/WMED58543.2023.10097444

Atomic Layer Processing of MoS₂

Wesley Jen, John D. Hues, Jake Soares, Steven Letourneau, Matthew Lawson, Devika Choudhury, Anil U. Mane, Yu Lu, Yaqiao Wu, Steven M. Hues, Lan Li, Jeffrey W. Elam, Elton Graugnard

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Molybdenum disulfide (MoS2) is one of several transition metal dichalcogenides consisting of a layer of transition atoms sandwiched between layers of chalcogens.[l] Interest in MoS2 has been driven by the fact that it exhibits a 1.8 e V direct electronic band gap in monolayer form and retains a moderate electron mobility (>10 cm2/Vs) even when only ∼6.5 Å (three atoms) thick. [2] These properties offer potential for retaining or improving speed and efficiency in scaled electronic devices.

Original language	English
Title of host publication	2023 IEEE Workshop on Microelectronics and Electron Devices, WMED 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350336450
DOIs	https://doi.org/10.1109/WMED58543.2023.10097444
State	Published - 2023
Event	20th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2023 - Boise, United States Duration: 31 Mar 2023 → …

Publication series

Name	IEEE Workshop on Microelectronics and Electron Devices, WMED
Volume	2023-March
ISSN (Print)	1947-3834
ISSN (Electronic)	1947-3842

Conference

Conference	20th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2023
Country/Territory	United States
City	Boise
Period	31/03/23 → …

Access to Document

10.1109/WMED58543.2023.10097444

Cite this

Jen, W., Hues, J. D., Soares, J., Letourneau, S., Lawson, M., Choudhury, D., Mane, A. U., Lu, Y., Wu, Y., Hues, S. M., Li, L., Elam, J. W., & Graugnard, E. (2023). Atomic Layer Processing of MoS₂. In 2023 IEEE Workshop on Microelectronics and Electron Devices, WMED 2023 (IEEE Workshop on Microelectronics and Electron Devices, WMED; Vol. 2023-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WMED58543.2023.10097444

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title = "Atomic Layer Processing of MoS2",

abstract = "Molybdenum disulfide (MoS2) is one of several transition metal dichalcogenides consisting of a layer of transition atoms sandwiched between layers of chalcogens.[l] Interest in MoS2 has been driven by the fact that it exhibits a 1.8 e V direct electronic band gap in monolayer form and retains a moderate electron mobility (>10 cm2/Vs) even when only ∼6.5 {\AA} (three atoms) thick. [2] These properties offer potential for retaining or improving speed and efficiency in scaled electronic devices.",

author = "Wesley Jen and Hues, {John D.} and Jake Soares and Steven Letourneau and Matthew Lawson and Devika Choudhury and Mane, {Anil U.} and Yu Lu and Yaqiao Wu and Hues, {Steven M.} and Lan Li and Elam, {Jeffrey W.} and Elton Graugnard",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 20th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2023 ; Conference date: 31-03-2023",

year = "2023",

doi = "10.1109/WMED58543.2023.10097444",

language = "English",

series = "IEEE Workshop on Microelectronics and Electron Devices, WMED",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE Workshop on Microelectronics and Electron Devices, WMED 2023",

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Jen, W, Hues, JD, Soares, J, Letourneau, S, Lawson, M, Choudhury, D, Mane, AU, Lu, Y, Wu, Y, Hues, SM, Li, L, Elam, JW & Graugnard, E 2023, Atomic Layer Processing of MoS₂. in 2023 IEEE Workshop on Microelectronics and Electron Devices, WMED 2023. IEEE Workshop on Microelectronics and Electron Devices, WMED, vol. 2023-March, Institute of Electrical and Electronics Engineers Inc., 20th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2023, Boise, United States, 31/03/23. https://doi.org/10.1109/WMED58543.2023.10097444

Atomic Layer Processing of MoS₂. / Jen, Wesley; Hues, John D.; Soares, Jake et al.
2023 IEEE Workshop on Microelectronics and Electron Devices, WMED 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (IEEE Workshop on Microelectronics and Electron Devices, WMED; Vol. 2023-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Elam, Jeffrey W.

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