Avalanche, Joule breakdown and hysteresis in carbon nanotube transistors

Eric Pop; Sumit Dutta; David Estrada; Albert Liao

doi:10.1109/IRPS.2009.5173287

Avalanche, Joule breakdown and hysteresis in carbon nanotube transistors

Eric Pop, Sumit Dutta, David Estrada, Albert Liao

Micron School of Materials Science and Engineering

University of Illinois at Urbana-Champaign

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

We explore several aspects of reliability in carbon nanotube transistors, including their physical dependence on diameter. Avalanche behavior is found at high fields (5-10 V/νm), while Joule breakdown is reached at high current and heating, in the presence of oxygen. Finally, we describe a method for minimizing hysteresis effects via pulsed measurements.

Original language	English
Title of host publication	2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages	405-408
Number of pages	4
DOIs	https://doi.org/10.1109/IRPS.2009.5173287
State	Published - 2009
Event	2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada Duration: 26 Apr 2009 → 30 Apr 2009

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	2009 IEEE International Reliability Physics Symposium, IRPS 2009
Country/Territory	Canada
City	Montreal, QC
Period	26/04/09 → 30/04/09

Keywords

Avalanche
Breakdown
Carbon nanotube
Hysteresis

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10.1109/IRPS.2009.5173287

Cite this

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title = "Avalanche, Joule breakdown and hysteresis in carbon nanotube transistors",

abstract = "We explore several aspects of reliability in carbon nanotube transistors, including their physical dependence on diameter. Avalanche behavior is found at high fields (5-10 V/νm), while Joule breakdown is reached at high current and heating, in the presence of oxygen. Finally, we describe a method for minimizing hysteresis effects via pulsed measurements.",

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language = "English",

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Pop, E, Dutta, S, Estrada, D & Liao, A 2009, Avalanche, Joule breakdown and hysteresis in carbon nanotube transistors. in 2009 IEEE International Reliability Physics Symposium, IRPS 2009., 5173287, IEEE International Reliability Physics Symposium Proceedings, pp. 405-408, 2009 IEEE International Reliability Physics Symposium, IRPS 2009, Montreal, QC, Canada, 26/04/09. https://doi.org/10.1109/IRPS.2009.5173287

Avalanche, Joule breakdown and hysteresis in carbon nanotube transistors. / Pop, Eric; Dutta, Sumit; Estrada, David et al.
2009 IEEE International Reliability Physics Symposium, IRPS 2009. 2009. p. 405-408 5173287 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Dutta, Sumit

AU - Estrada, David

AU - Liao, Albert

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AB - We explore several aspects of reliability in carbon nanotube transistors, including their physical dependence on diameter. Avalanche behavior is found at high fields (5-10 V/νm), while Joule breakdown is reached at high current and heating, in the presence of oxygen. Finally, we describe a method for minimizing hysteresis effects via pulsed measurements.

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KW - Carbon nanotube

KW - Hysteresis

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Avalanche, Joule breakdown and hysteresis in carbon nanotube transistors

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