TY - JOUR
T1 - Band-edge photoluminescence recovery from zinc-blende CdSe nanocrystals synthesized at room temperature
AU - Li, Rongfu
AU - Lee, Jeunghoon
AU - Kang, Dafei
AU - Luo, Zhengtang
AU - Aindow, Mark
AU - Papadimitrakopoulos, Fotios
PY - 2006/2/3
Y1 - 2006/2/3
N2 - Low-cost, large-scale production of highly photoluminescent semiconductor nanocrystals (NCs) is desirable for a variety of applications. In this paper we report the realization of highly photoluminescent zinc-blende CdSe nanocrystals from room-temperature water-phase synthesis, followed by low-temperature (80 ±5°C) chemical etching in a solution of 3-amino-l-propanol/ H 2O (v/v = 10/1). X-ray diffraction (XRD) and transmission electron microscopy (TEM) data indicate that these CdSe NCs exhibit a cubic, zinc-blende crystal structure. After etching, these CdSe nanocrystals show strong band-edge photoluminescence (with quantum efficiency as high as 50%) and lack of deep-trap emissions. A high-resolution TEM investigation suggests that this etching not only removes surface irregularities, but also attacks grain boundaries. Moreover, the size distribution reduces upon progressive etching to allow photoluminescence full-width-at-half-maximum (FWHM) values as low as 30 nm.
AB - Low-cost, large-scale production of highly photoluminescent semiconductor nanocrystals (NCs) is desirable for a variety of applications. In this paper we report the realization of highly photoluminescent zinc-blende CdSe nanocrystals from room-temperature water-phase synthesis, followed by low-temperature (80 ±5°C) chemical etching in a solution of 3-amino-l-propanol/ H 2O (v/v = 10/1). X-ray diffraction (XRD) and transmission electron microscopy (TEM) data indicate that these CdSe NCs exhibit a cubic, zinc-blende crystal structure. After etching, these CdSe nanocrystals show strong band-edge photoluminescence (with quantum efficiency as high as 50%) and lack of deep-trap emissions. A high-resolution TEM investigation suggests that this etching not only removes surface irregularities, but also attacks grain boundaries. Moreover, the size distribution reduces upon progressive etching to allow photoluminescence full-width-at-half-maximum (FWHM) values as low as 30 nm.
UR - http://www.scopus.com/inward/record.url?scp=32244444013&partnerID=8YFLogxK
U2 - 10.1002/adfm.200500319
DO - 10.1002/adfm.200500319
M3 - Article
AN - SCOPUS:32244444013
SN - 1616-301X
VL - 16
SP - 345
EP - 350
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 3
ER -