Abstract
This work reviews the mechanical properties and fracture mechanics of materials important in the manufacture of multilayer interconnects on silicon chips in order to understand surface damage caused during chemical mechanical polishing (CMP). It gives an explanation for chatter marks, surface flaking in interlayer dielectric material, and rolling indenter and plastic plow lines in copper on the wafer surface during CMP of silicon chips.
| Original language | English |
|---|---|
| Pages (from-to) | H239-H248 |
| Journal | Journal of the Electrochemical Society |
| Volume | 154 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2007 |
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