Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength

Chang Hyun Kim; Omid Yaghmazadeh; Denis Tondelier; Yong Bin Jeong; Yvan Bonnassieux; Gilles Horowitz

doi:10.1063/1.3574661

Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength

Chang Hyun Kim, Omid Yaghmazadeh, Denis Tondelier, Yong Bin Jeong, Yvan Bonnassieux, Gilles Horowitz

Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

104 Scopus citations

Abstract

The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.

Original language	English
Article number	083710
Journal	Journal of Applied Physics
Volume	109
Issue number	8
DOIs	https://doi.org/10.1063/1.3574661
State	Published - 15 Apr 2011
Externally published	Yes

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title = "Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength",

abstract = "The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.",

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AU - Kim, Chang Hyun

AU - Yaghmazadeh, Omid

AU - Tondelier, Denis

AU - Jeong, Yong Bin

AU - Bonnassieux, Yvan

AU - Horowitz, Gilles

PY - 2011/4/15

Y1 - 2011/4/15

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AB - The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.

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Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength

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