TY - GEN
T1 - Characterization of negative differential resistance in chalcogenide devices containing silver
AU - Bregaj, Armand
AU - Campbell, Kristy A.
PY - 2006
Y1 - 2006
N2 - Chalcogenide materials are compounds that contain one of the group VI elements such as sulfur (S), selenium (Se), and tellurium (Te). These materials are presently under research in industry and academia for their potential use in electronic memory devices. An electrical property called negative differential resistance (NDR) has been observed in chalcogenide devices containing silver (Ag). NDR describes the I-V characteristics of the device where the resistance has a negative slope. Some of the devices that operate in the NDR region are the tunnel diode, resonant tunnel diode, unijunction transistor, and Gunn diode. The research work presented in this poster includes the measured I-V characteristics of chalcogenide devices exhibiting the NDR property. The electrical data obtained is compared with existing device models to determine a potential mechanism responsible for the observed NDR in silver-containing chalcogenide devices.
AB - Chalcogenide materials are compounds that contain one of the group VI elements such as sulfur (S), selenium (Se), and tellurium (Te). These materials are presently under research in industry and academia for their potential use in electronic memory devices. An electrical property called negative differential resistance (NDR) has been observed in chalcogenide devices containing silver (Ag). NDR describes the I-V characteristics of the device where the resistance has a negative slope. Some of the devices that operate in the NDR region are the tunnel diode, resonant tunnel diode, unijunction transistor, and Gunn diode. The research work presented in this poster includes the measured I-V characteristics of chalcogenide devices exhibiting the NDR property. The electrical data obtained is compared with existing device models to determine a potential mechanism responsible for the observed NDR in silver-containing chalcogenide devices.
UR - http://www.scopus.com/inward/record.url?scp=34250184641&partnerID=8YFLogxK
U2 - 10.1109/WMED.2006.1678311
DO - 10.1109/WMED.2006.1678311
M3 - Conference contribution
AN - SCOPUS:34250184641
SN - 142440374X
SN - 9781424403745
T3 - 2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06
SP - 62
BT - 2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06
T2 - 2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06
Y2 - 14 April 2006 through 14 April 2006
ER -