Characterization of Sn, Zn, In, and Sb-containing GeSe alloys for phase-change electronic memory applications

Kristy A. Campbell, Morgan G. Davis, Jeffrey M. Peloquin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Two-terminal electronic devices consisting of stacks of chalcogenide layers containing GeTe, Ge40Se60, SnTe, or SnSe have shown promise for application as electronic phase-change memories (Campbell, K.A. and Anderson, CM., Microelectronics Journal 38, 52-59 (2007)). Here, we report resistance switching in GeTe/ZnTe devices as well as programmable multi-state resistances in the GeTe/SnSe stack structure device. We also report the synthesis of (Ge40Se60))100-zMz alloys where M = Sn, Ln, Sb, and Zn, along with the corresponding bulk material Raman spectra and differential scanning calorimetry data, used to explore material compositions that may potentially be useful for producing multi-state phase-change memory devices.

Original languageEnglish
Title of host publication2007 MRS Spring Meeting
PublisherMaterials Research Society
Pages343-348
Number of pages6
ISBN (Print)9781558999572
DOIs
StatePublished - 2007
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: 10 Apr 200712 Apr 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume997
ISSN (Print)0272-9172

Conference

Conference2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period10/04/0712/04/07

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