TY - GEN
T1 - Characterization of Sn, Zn, In, and Sb-containing GeSe alloys for phase-change electronic memory applications
AU - Campbell, Kristy A.
AU - Davis, Morgan G.
AU - Peloquin, Jeffrey M.
PY - 2007
Y1 - 2007
N2 - Two-terminal electronic devices consisting of stacks of chalcogenide layers containing GeTe, Ge40Se60, SnTe, or SnSe have shown promise for application as electronic phase-change memories (Campbell, K.A. and Anderson, CM., Microelectronics Journal 38, 52-59 (2007)). Here, we report resistance switching in GeTe/ZnTe devices as well as programmable multi-state resistances in the GeTe/SnSe stack structure device. We also report the synthesis of (Ge40Se60))100-zMz alloys where M = Sn, Ln, Sb, and Zn, along with the corresponding bulk material Raman spectra and differential scanning calorimetry data, used to explore material compositions that may potentially be useful for producing multi-state phase-change memory devices.
AB - Two-terminal electronic devices consisting of stacks of chalcogenide layers containing GeTe, Ge40Se60, SnTe, or SnSe have shown promise for application as electronic phase-change memories (Campbell, K.A. and Anderson, CM., Microelectronics Journal 38, 52-59 (2007)). Here, we report resistance switching in GeTe/ZnTe devices as well as programmable multi-state resistances in the GeTe/SnSe stack structure device. We also report the synthesis of (Ge40Se60))100-zMz alloys where M = Sn, Ln, Sb, and Zn, along with the corresponding bulk material Raman spectra and differential scanning calorimetry data, used to explore material compositions that may potentially be useful for producing multi-state phase-change memory devices.
UR - http://www.scopus.com/inward/record.url?scp=38549111099&partnerID=8YFLogxK
U2 - 10.1557/proc-0997-i12-10
DO - 10.1557/proc-0997-i12-10
M3 - Conference contribution
AN - SCOPUS:38549111099
SN - 9781558999572
T3 - Materials Research Society Symposium Proceedings
SP - 343
EP - 348
BT - 2007 MRS Spring Meeting
PB - Materials Research Society
T2 - 2007 MRS Spring Meeting
Y2 - 10 April 2007 through 12 April 2007
ER -