TY - JOUR
T1 - Coimplantation and electrical activity of C in GaAs
T2 - Stoichiometry and damage effects
AU - Moll, A. J.
AU - Yu, Kin Man
AU - Walukiewicz, W.
AU - Hansen, W. L.
AU - Haller, E. E.
PY - 1992
Y1 - 1992
N2 - We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless of the chemical nature of the coimplant. Maintaining stoichiometry by coimplanting a group III element further increased activation in substrates heavily damaged during implantation. Activation of 65±3%, corresponding to a sheet free-carrier concentration of 3.5×1014 cm-2, was achieved by coimplanting Ga and annealing at 950°C for 10 s.
AB - We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless of the chemical nature of the coimplant. Maintaining stoichiometry by coimplanting a group III element further increased activation in substrates heavily damaged during implantation. Activation of 65±3%, corresponding to a sheet free-carrier concentration of 3.5×1014 cm-2, was achieved by coimplanting Ga and annealing at 950°C for 10 s.
UR - http://www.scopus.com/inward/record.url?scp=0000942724&partnerID=8YFLogxK
U2 - 10.1063/1.107004
DO - 10.1063/1.107004
M3 - Article
AN - SCOPUS:0000942724
SN - 0003-6951
VL - 60
SP - 2383
EP - 2385
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 19
ER -