Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects

A. J. Moll, Kin Man Yu, W. Walukiewicz, W. L. Hansen, E. E. Haller

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Abstract

We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless of the chemical nature of the coimplant. Maintaining stoichiometry by coimplanting a group III element further increased activation in substrates heavily damaged during implantation. Activation of 65±3%, corresponding to a sheet free-carrier concentration of 3.5×1014 cm-2, was achieved by coimplanting Ga and annealing at 950°C for 10 s.

Original languageEnglish
Pages (from-to)2383-2385
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number19
DOIs
StatePublished - 1992

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