TY - JOUR
T1 - Cold Atmospheric Pressure Plasma Device Exhibits Etching Effects on Bacterial Biofilms
AU - Croteau, Adam
AU - White, Amanda
AU - Cornell, Kenneth A.
AU - Browning, Jim
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2022/5/1
Y1 - 2022/5/1
N2 - Cold atmospheric pressure plasma (CAP) treatment has been shown to kill bacteria and remove bacterial biofilms from surfaces. Here, we report the etch capacity of a linear discharge CAP device on Pseudomonas fluorescens biofilms. A 21 kHz, 1.4-kV RMS AC voltage applied to the CAP electrodes generated a hydrated Ar plasma between the plates, with the gas flow directing the plasma species toward the biological sample, causing both bacterial killing and etching of the biofilm. Typical discharge currents for a 2.4-cm long, 0.6-mm wide linear discharge device were 1-4.4 mA. Hydrated Ar flow gas was critical for removal of biofilm from a stainless steel substrate, while both hydrated and dry Ar + O2, Ar + air, O2 only, and air only flow gas mixtures did not cause etching at equivalent or greater discharge current intensities. A biofilm etch rate of > 2μ {m} was achieved, provided the plasma discharge was within 1-2 mm of the substrate surface and used a hydrated Ar gas flow of at least 5 LPM.
AB - Cold atmospheric pressure plasma (CAP) treatment has been shown to kill bacteria and remove bacterial biofilms from surfaces. Here, we report the etch capacity of a linear discharge CAP device on Pseudomonas fluorescens biofilms. A 21 kHz, 1.4-kV RMS AC voltage applied to the CAP electrodes generated a hydrated Ar plasma between the plates, with the gas flow directing the plasma species toward the biological sample, causing both bacterial killing and etching of the biofilm. Typical discharge currents for a 2.4-cm long, 0.6-mm wide linear discharge device were 1-4.4 mA. Hydrated Ar flow gas was critical for removal of biofilm from a stainless steel substrate, while both hydrated and dry Ar + O2, Ar + air, O2 only, and air only flow gas mixtures did not cause etching at equivalent or greater discharge current intensities. A biofilm etch rate of > 2μ {m} was achieved, provided the plasma discharge was within 1-2 mm of the substrate surface and used a hydrated Ar gas flow of at least 5 LPM.
KW - antmicrobial
KW - biofilms
KW - cold atmospheric pressure plasma (CAP)
KW - etch
KW - Antimicrobial
UR - https://scholarworks.boisestate.edu/chem_facpubs/153
UR - https://doi.org/10.1109/TRPMS.2021.3133183
UR - http://www.scopus.com/inward/record.url?scp=85121393633&partnerID=8YFLogxK
U2 - 10.1109/TRPMS.2021.3133183
DO - 10.1109/TRPMS.2021.3133183
M3 - Article
VL - 6
SP - 619
EP - 625
JO - IEEE Transactions on Radiation and Plasma Medical Sciences
JF - IEEE Transactions on Radiation and Plasma Medical Sciences
IS - 5
ER -