Compact method for modeling and simulation of memristor devices: Ion conductor chalcogenide-based memristor devices

Robinson E. Pino, James W. Bohl, Nathan McDonald, Bryant Wysocki, Peter Rozwood, Kristy A. Campbell, Antonio Oblea, Achyut Timilsina

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

68 Scopus citations

Abstract

A compact model and simulation methodology for chalcogenide based memristor devices is proposed. From a microprocessor design view point, it is important to be able to simulate large numbers of devices within the integrated circuit architecture in order to speed up reliably the development process. Ideally, device models would accurately describe the characteristic device behavior and would be represented by single-valued equations without requiring the need for recursive or numerically intensive solutions. With this in mind, we have developed an empirical chalcogenide compact memristor model that accurately describes all regions of operations of memristor devices employing single-valued equations.

Original languageEnglish
Title of host publicationProceedings of the 2010 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2010
Pages1-4
Number of pages4
DOIs
StatePublished - 2010
Event2010 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2010 - Anaheim, CA, United States
Duration: 17 Jun 201018 Jun 2010

Publication series

NameProceedings of the 2010 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2010

Conference

Conference2010 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2010
Country/TerritoryUnited States
CityAnaheim, CA
Period17/06/1018/06/10

Keywords

  • Memory device
  • Memristor
  • Thin film device

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