Complementary Vacuum Field Emission Transistor

Ranajoy Bhattacharya, Jin-Woo Han, Jim Browning, M. Meyyappan

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A complementary vacuum field emission device structure is proposed, and its operation is analyzed by multiphysics simulation. A freely moving double-clamped cantilever, which balances the electrostatic attraction force and elastic restoration force, is used as the source electrode while the drain electrode is fixed. The electron-emitting cathode is formed on the source for the n-type device and on the drain for the p-type. Thus, complementary current–voltage characteristics are obtained only with Fowler–Nordheim tunneling electron transport. The impact of various design parameters such as vacuum gap, cantilever beam thickness, gate width, and tip offset on the drain and gate leakage currents is investigated. Inverter logic operation is verified successfully using complementary devices.

Original languageAmerican English
Pages (from-to)5244-5249
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume68
Issue number10
DOIs
StatePublished - Oct 2021

Keywords

  • complementary operation
  • double-clamped cantilever
  • inverter logic
  • tunneling
  • vacuum electronics

EGS Disciplines

  • Electrical and Computer Engineering

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