Confocal Raman Spectroscopy and AFM for Evaluation of Sidewalls in Type II Superlattice FPAs

Research output: Contribution to conferencePresentation

Abstract

We propose to utilize confocal Raman spectroscopy combined with high resolution atomic force microscopy (AFM) for nondestructive characterisation of the sidewalls of etched and passivated small pixel (24 μ m×24 μ m) focal plane arrays (FPA) fabricated using LW/LWIR InAs/GaSb type-II strained layer superlattice (T2SL) detector material. Special high aspect ratio Si and GaAs AFM probes, with tip length of 13 μ m and tip aperture less than 7°, allow characterisation of the sidewall morphology. Confocal microscopy enables imaging of the sidewall profile through optical sectioning. Raman spectra measured on etched T2SL FPA single pixels enable us to quantify the non-uniformity of the mesa delineation process.

Original languageAmerican English
DOIs
StatePublished - 4 Jun 2015
EventProceedings of SPIE -
Duration: 4 Jun 2015 → …

Conference

ConferenceProceedings of SPIE
Period4/06/15 → …

Keywords

  • AFM
  • InAs/GaSb superlattice
  • confocal raman spectroscopy
  • dual-band imaging
  • focal plane array
  • infrared detection

EGS Disciplines

  • Physics

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