Abstract
We propose to utilize confocal Raman spectroscopy combined with high resolution atomic force microscopy (AFM) for nondestructive characterisation of the sidewalls of etched and passivated small pixel (24 μ m×24 μ m) focal plane arrays (FPA) fabricated using LW/LWIR InAs/GaSb type-II strained layer superlattice (T2SL) detector material. Special high aspect ratio Si and GaAs AFM probes, with tip length of 13 μ m and tip aperture less than 7°, allow characterisation of the sidewall morphology. Confocal microscopy enables imaging of the sidewall profile through optical sectioning. Raman spectra measured on etched T2SL FPA single pixels enable us to quantify the non-uniformity of the mesa delineation process.
Original language | American English |
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DOIs | |
State | Published - 4 Jun 2015 |
Event | Proceedings of SPIE - Duration: 4 Jun 2015 → … |
Conference
Conference | Proceedings of SPIE |
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Period | 4/06/15 → … |
Keywords
- AFM
- InAs/GaSb superlattice
- confocal raman spectroscopy
- dual-band imaging
- focal plane array
- infrared detection
EGS Disciplines
- Physics