TY - JOUR
T1 - Conformally back-filled, non-close-packed inverse-opal photonic crystals
AU - King, Jeffrey S.
AU - Galliot, Davy P.
AU - Graugnard, Elton
AU - Summers, Christopher J.
AU - Gaillot, Davy P.
N1 - Topological tuning of photonic crystals significantly changes their photonic-band properties. Significant modification of inverse opal topology by heat treatment and a two-step atomic layer deposition infiltration process is demonstrated, facilitating precise control and tuning of photonic-band properties. The figure shows topologies at different degrees of backfilling.
PY - 2006/4/18
Y1 - 2006/4/18
N2 - The atomic layer deposition (ALD) process to form back-filled, non-close-packed inverse opal photonic crystals, was analyzed. The used process contains two steps, first, conformally infiltrating heavily sintered silica opals with TiO2 and etching the spheres with hydrofluoric acid, and second, conformally backfilling the resulting inverse opal. This new process allowed a static tunability to ∼400 nm in the position of the directional bandgap. ALD has the unique ability to fully and uniformly infiltrate porous structures, even within extended nanoscale channels, which is critical to successful infiltration and inversion of the template. The power of a two-stage ALD process to uniquely enable the precise formation and tuning of complex PC structures has been demonstrated.
AB - The atomic layer deposition (ALD) process to form back-filled, non-close-packed inverse opal photonic crystals, was analyzed. The used process contains two steps, first, conformally infiltrating heavily sintered silica opals with TiO2 and etching the spheres with hydrofluoric acid, and second, conformally backfilling the resulting inverse opal. This new process allowed a static tunability to ∼400 nm in the position of the directional bandgap. ALD has the unique ability to fully and uniformly infiltrate porous structures, even within extended nanoscale channels, which is critical to successful infiltration and inversion of the template. The power of a two-stage ALD process to uniquely enable the precise formation and tuning of complex PC structures has been demonstrated.
KW - atomic layer deposition
KW - colloidal crystals
KW - colloids
KW - inverse opals
KW - mesoporous materials
KW - photonic cyrstals
UR - http://www.scopus.com/inward/record.url?scp=33646708749&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1002/adma.200501077
U2 - 10.1002/adma.200501077
DO - 10.1002/adma.200501077
M3 - Article
AN - SCOPUS:33646708749
SN - 0935-9648
VL - 18
SP - 1063
EP - 1067
JO - Advanced Materials
JF - Advanced Materials
IS - 8
ER -