Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

Qingyu Lei; Maryam Golalikhani; Bruce A. Davidson; Guozhen Liu; Darrell G. Schlom; Qiao Qiao; Yimei Zhu; Ravini U. Chandrasena; Weibing Yang; Alexander X. Gray; Elke Arenholz; Andrew K. Farrar; Dmitri A. Tenne; Minhui Hu; Jiandong Guo; Rakesh K. Singh; Xiaoxing Xi

doi:10.1038/s41535-017-0015-x

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

Qingyu Lei, Maryam Golalikhani, Bruce A. Davidson, Guozhen Liu, Darrell G. Schlom, Qiao Qiao, Yimei Zhu, Ravini U. Chandrasena, Weibing Yang, Alexander X. Gray, Elke Arenholz, Andrew K. Farrar, Dmitri A. Tenne, Minhui Hu, Jiandong Guo, Rakesh K. Singh, Xiaoxing Xi

Physics Department

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36 Scopus citations

Abstract

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr_1+x Ti_1-x O_3+δ, Ruddlesden-Popper phase La _n+1Ni _n O_3n+1 (n = 4), and LaAl_1+y O_3(1+0.5y)/SrTiO₃ interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO₃/SrTiO₃ interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.

Original language	English
Article number	15
Journal	npj Quantum Materials
Volume	2
Issue number	1
DOIs	https://doi.org/10.1038/s41535-017-0015-x
State	Published - 1 Dec 2017

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Lei, Q., Golalikhani, M., Davidson, B. A., Liu, G., Schlom, D. G., Qiao, Q., Zhu, Y., Chandrasena, R. U., Yang, W., Gray, A. X., Arenholz, E., Farrar, A. K., Tenne, D. A., Hu, M., Guo, J., Singh, R. K., & Xi, X. (2017). Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy. npj Quantum Materials, 2(1), Article 15. https://doi.org/10.1038/s41535-017-0015-x

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title = "Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy",

abstract = "Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+x Ti1-x O3+δ, Ruddlesden-Popper phase La n+1Ni n O3n+1 (n = 4), and LaAl1+y O3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.",

author = "Qingyu Lei and Maryam Golalikhani and Davidson, {Bruce A.} and Guozhen Liu and Schlom, {Darrell G.} and Qiao Qiao and Yimei Zhu and Chandrasena, {Ravini U.} and Weibing Yang and Gray, {Alexander X.} and Elke Arenholz and Farrar, {Andrew K.} and Tenne, {Dmitri A.} and Minhui Hu and Jiandong Guo and Singh, {Rakesh K.} and Xiaoxing Xi",

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year = "2017",

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Lei, Q, Golalikhani, M, Davidson, BA, Liu, G, Schlom, DG, Qiao, Q, Zhu, Y, Chandrasena, RU, Yang, W, Gray, AX, Arenholz, E, Farrar, AK, Tenne, DA, Hu, M, Guo, J, Singh, RK & Xi, X 2017, 'Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy', npj Quantum Materials, vol. 2, no. 1, 15. https://doi.org/10.1038/s41535-017-0015-x

TY - JOUR

T1 - Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

AU - Lei, Qingyu

AU - Golalikhani, Maryam

AU - Davidson, Bruce A.

AU - Liu, Guozhen

AU - Schlom, Darrell G.

AU - Qiao, Qiao

AU - Zhu, Yimei

AU - Chandrasena, Ravini U.

AU - Yang, Weibing

AU - Gray, Alexander X.

AU - Arenholz, Elke

AU - Farrar, Andrew K.

AU - Tenne, Dmitri A.

AU - Hu, Minhui

AU - Guo, Jiandong

AU - Singh, Rakesh K.

AU - Xi, Xiaoxing

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+x Ti1-x O3+δ, Ruddlesden-Popper phase La n+1Ni n O3n+1 (n = 4), and LaAl1+y O3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.

AB - Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+x Ti1-x O3+δ, Ruddlesden-Popper phase La n+1Ni n O3n+1 (n = 4), and LaAl1+y O3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.

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DO - 10.1038/s41535-017-0015-x

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VL - 2

JO - npj Quantum Materials

JF - npj Quantum Materials

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ER -

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

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