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Demonstration of Amplification in a Linear Format Crossed-field Amplifier using a Gated Field Emitter Injected Beam

  • R. Bhattacharya
  • , C. Segura Del Rio
  • , J. West
  • , M. Pearlman
  • , W. Chern
  • , R. Hay
  • , A. Akinwande
  • , A. Garner
  • , J. Browning
  • Boise State University
  • Massachusetts Institute of Technology
  • Purdue University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High power crossed-field devices such as crossed-field amplifiers (CFA) are advantageous in terms of power density and efficiency. Disadvantages are low gain and relatively high noise. Improving gain and noise characteristics would make the CFA more appealing for a variety of applications. In this work, we demonstrated operation of a linear format CFA using a meander line slow wave circuit. Operating frequency is 561 MHz. The circuit is 138 mm long and 72.5 mm wide with end-hats and a segmented (9 element) end collector. Circuit retardation is 21. The circuit to sole gap is 20 mm. An injected beam configuration using silicon gate field emitter arrays was used.

Original languageEnglish
Title of host publication25th IEEE Pulsed Power Conference, PPC 2025 and the 52nd IEEE International Conference on Plasma Science, ICOPS 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331543761
DOIs
StatePublished - 2025
Event25th IEEE Pulsed Power Conference, PPC 2025 and the 52nd IEEE International Conference on Plasma Science, ICOPS 2025 - Berlin, Germany
Duration: 15 Jun 202520 Jun 2025

Publication series

NameIEEE International Pulsed Power Conference
ISSN (Print)2158-4915
ISSN (Electronic)2158-4923

Conference

Conference25th IEEE Pulsed Power Conference, PPC 2025 and the 52nd IEEE International Conference on Plasma Science, ICOPS 2025
Country/TerritoryGermany
CityBerlin
Period15/06/2520/06/25

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