Device Geometry Variation Effects on E-Field and Capacitance of Nanoscale Vacuum Channel Device

Nanoscale vacuum channel devices (NVCDs) enable ballistic electron transport across nanoscale gaps, making them promising for high-frequency applications. However, the role of geometry in electron transport and parasitic effects in lateral NVCDs is not well understood. This work uses electrostatic simulations to study the impact of channel gap, cathode curvature, electrode length, and array density on electric field distribution and capacitance. Unlike prior studies, the electric field is analyzed at both the tip and within the channel. Results show gaps dominate both field and capacitance, while an intermediate curvature (~25 nm) balances emission and transport. Electrode length has negligible influence, and minimal screening is observed in lateral arrays. These findings provide practical design guidelines for optimizing NVCDs toward improved high-frequency circuit performance.