Direct evidence of carbon precipitates in GaAs and InP

A. J. Moll; E. E. Haller; J. W. Ager; W. Walukiewicz

doi:10.1063/1.112123

Direct evidence of carbon precipitates in GaAs and InP

A. J. Moll, E. E. Haller, J. W. Ager, W. Walukiewicz

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Abstract

Raman spectra of carbon-doped GaAs and InP show two peaks which are characteristic of C clusters with sp² bonding. The peaks are seen in C-implanted GaAs and InP following either rapid thermal annealing or furnace annealing. The peaks are also seen in heavily doped epilayers following furnace annealing. Various mechanisms for C precipitation are discussed. Experimental evidence suggests that the loss of the group V component at the surface during annealing may play a role in the precipitation of C.

Original language	English
Pages (from-to)	1145-1147
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	9
DOIs	https://doi.org/10.1063/1.112123
State	Published - 1994

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@article{88f8bdba55e14ff0ba03f9ce6d62d03e,

title = "Direct evidence of carbon precipitates in GaAs and InP",

abstract = "Raman spectra of carbon-doped GaAs and InP show two peaks which are characteristic of C clusters with sp2 bonding. The peaks are seen in C-implanted GaAs and InP following either rapid thermal annealing or furnace annealing. The peaks are also seen in heavily doped epilayers following furnace annealing. Various mechanisms for C precipitation are discussed. Experimental evidence suggests that the loss of the group V component at the surface during annealing may play a role in the precipitation of C.",

author = "Moll, \{A. J.\} and Haller, \{E. E.\} and Ager, \{J. W.\} and W. Walukiewicz",

year = "1994",

doi = "10.1063/1.112123",

language = "English",

volume = "65",

pages = "1145--1147",

number = "9",

}

TY - JOUR

T1 - Direct evidence of carbon precipitates in GaAs and InP

AU - Moll, A. J.

AU - Haller, E. E.

AU - Ager, J. W.

AU - Walukiewicz, W.

PY - 1994

Y1 - 1994

N2 - Raman spectra of carbon-doped GaAs and InP show two peaks which are characteristic of C clusters with sp2 bonding. The peaks are seen in C-implanted GaAs and InP following either rapid thermal annealing or furnace annealing. The peaks are also seen in heavily doped epilayers following furnace annealing. Various mechanisms for C precipitation are discussed. Experimental evidence suggests that the loss of the group V component at the surface during annealing may play a role in the precipitation of C.

AB - Raman spectra of carbon-doped GaAs and InP show two peaks which are characteristic of C clusters with sp2 bonding. The peaks are seen in C-implanted GaAs and InP following either rapid thermal annealing or furnace annealing. The peaks are also seen in heavily doped epilayers following furnace annealing. Various mechanisms for C precipitation are discussed. Experimental evidence suggests that the loss of the group V component at the surface during annealing may play a role in the precipitation of C.

UR - https://www.scopus.com/pages/publications/0000136626

U2 - 10.1063/1.112123

DO - 10.1063/1.112123

M3 - Article

AN - SCOPUS:0000136626

SN - 0003-6951

VL - 65

SP - 1145

EP - 1147

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Direct evidence of carbon precipitates in GaAs and InP

Abstract

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