Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays

Madison D. Nordstrom; Trent A. Garrett; Pooja Reddy; John McElearney; James R. Rushing; Kevin D. Vallejo; Kunal Mukherjee; Kevin A. Grossklaus; Thomas E. Vandervelde; Paul J. Simmonds

doi:10.1021/acs.cgd.3c00812

Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays

Madison D. Nordstrom
, Trent A. Garrett
, Pooja Reddy
, John McElearney
, James R. Rushing
, Kevin D. Vallejo
, Kunal Mukherjee
, Kevin A. Grossklaus
, Thomas E. Vandervelde
, Paul J. Simmonds

Physics Department

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We demonstrate that when highly lattice-mismatched GaSb layers are grown on GaAs(111)A substrates, the strain can be relieved by a self-assembled array of interfacial misfit (IMF) dislocations. This 2D array consists of periodically spaced, pure 60° dislocations that lie in the plane of the GaSb/GaAs(111)A interface. The efficient strain relief provided by the IMF means that the GaSb exhibits good material quality, with threading dislocation densities in the 2-3 × 10⁸ cm^-2 range. Other through-film defects associated with twinned GaSb(111) regions have densities between 0.2 and 2 × 10⁸ cm^-2. The ability to grow GaSb on GaAs substrates with a (111) orientation creates research opportunities for the integration of dissimilar materials.

Original language	English
Pages (from-to)	8670-8677
Number of pages	8
Journal	Crystal Growth and Design
Volume	23
Issue number	12
DOIs	https://doi.org/10.1021/acs.cgd.3c00812
State	Published - 6 Dec 2023

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title = "Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays",

abstract = "We demonstrate that when highly lattice-mismatched GaSb layers are grown on GaAs(111)A substrates, the strain can be relieved by a self-assembled array of interfacial misfit (IMF) dislocations. This 2D array consists of periodically spaced, pure 60° dislocations that lie in the plane of the GaSb/GaAs(111)A interface. The efficient strain relief provided by the IMF means that the GaSb exhibits good material quality, with threading dislocation densities in the 2-3 × 108 cm-2 range. Other through-film defects associated with twinned GaSb(111) regions have densities between 0.2 and 2 × 108 cm-2. The ability to grow GaSb on GaAs substrates with a (111) orientation creates research opportunities for the integration of dissimilar materials.",

author = "Nordstrom, \{Madison D.\} and Garrett, \{Trent A.\} and Pooja Reddy and John McElearney and Rushing, \{James R.\} and Vallejo, \{Kevin D.\} and Kunal Mukherjee and Grossklaus, \{Kevin A.\} and Vandervelde, \{Thomas E.\} and Simmonds, \{Paul J.\}",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors. Published by American Chemical Society.",

year = "2023",

month = dec,

day = "6",

doi = "10.1021/acs.cgd.3c00812",

language = "English",

volume = "23",

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TY - JOUR

T1 - Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays

AU - Nordstrom, Madison D.

AU - Garrett, Trent A.

AU - Reddy, Pooja

AU - McElearney, John

AU - Rushing, James R.

AU - Vallejo, Kevin D.

AU - Mukherjee, Kunal

AU - Grossklaus, Kevin A.

AU - Vandervelde, Thomas E.

AU - Simmonds, Paul J.

PY - 2023/12/6

Y1 - 2023/12/6

N2 - We demonstrate that when highly lattice-mismatched GaSb layers are grown on GaAs(111)A substrates, the strain can be relieved by a self-assembled array of interfacial misfit (IMF) dislocations. This 2D array consists of periodically spaced, pure 60° dislocations that lie in the plane of the GaSb/GaAs(111)A interface. The efficient strain relief provided by the IMF means that the GaSb exhibits good material quality, with threading dislocation densities in the 2-3 × 108 cm-2 range. Other through-film defects associated with twinned GaSb(111) regions have densities between 0.2 and 2 × 108 cm-2. The ability to grow GaSb on GaAs substrates with a (111) orientation creates research opportunities for the integration of dissimilar materials.

AB - We demonstrate that when highly lattice-mismatched GaSb layers are grown on GaAs(111)A substrates, the strain can be relieved by a self-assembled array of interfacial misfit (IMF) dislocations. This 2D array consists of periodically spaced, pure 60° dislocations that lie in the plane of the GaSb/GaAs(111)A interface. The efficient strain relief provided by the IMF means that the GaSb exhibits good material quality, with threading dislocation densities in the 2-3 × 108 cm-2 range. Other through-film defects associated with twinned GaSb(111) regions have densities between 0.2 and 2 × 108 cm-2. The ability to grow GaSb on GaAs substrates with a (111) orientation creates research opportunities for the integration of dissimilar materials.

UR - https://www.scopus.com/pages/publications/85177818649

U2 - 10.1021/acs.cgd.3c00812

DO - 10.1021/acs.cgd.3c00812

M3 - Article

AN - SCOPUS:85177818649

SN - 1528-7483

VL - 23

SP - 8670

EP - 8677

JO - Crystal Growth and Design

JF - Crystal Growth and Design

IS - 12

ER -

Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays

Abstract

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