TY - JOUR
T1 - Dynamic Variations of the Light-Induced Effects in a-GexSe100-x Films: Experiment and Simulation
T2 - Experiment and simulation
AU - Mishchenko, A.
AU - Berashevich, J.
AU - Wolf, K.
AU - Reznik, A.
AU - Tenne, D. A.
AU - Mitkova, M.
N1 - Publisher Copyright:
© 2015 Optical Society of America.
PY - 2015/2/1
Y1 - 2015/2/1
N2 - Light-induced effects in a-GexSe100-x chalcogenide glasses, i.e., photobleaching (PB), photodarkening (PD), and photoinduced structural transformations, have been investigated as a function of composition across the glass-forming region by an optical two-laser-beam technique, Raman analysis, and first-principles simulations. It was found that there is a critical concentration of Ge x≈30% that corresponds to the crossover from transient PB to the mixture of transient PD and metastable PB. At the microscopic level, this corresponds to the change in the photoexcitation process. At low-Ge concentration (<20%), it is governed by the lone pair (LP) excitation, which diminishes with an increase in Ge content, yielding Ge-Se bond breakage at x≈30%. Further, an increase in Ge concentration (x>30%) favors breakage of the Ge-Ge bonds upon photoexcitation and formation of light-induced 3D nanostructures. The bond conversion process is verified by Raman analysis.
AB - Light-induced effects in a-GexSe100-x chalcogenide glasses, i.e., photobleaching (PB), photodarkening (PD), and photoinduced structural transformations, have been investigated as a function of composition across the glass-forming region by an optical two-laser-beam technique, Raman analysis, and first-principles simulations. It was found that there is a critical concentration of Ge x≈30% that corresponds to the crossover from transient PB to the mixture of transient PD and metastable PB. At the microscopic level, this corresponds to the change in the photoexcitation process. At low-Ge concentration (<20%), it is governed by the lone pair (LP) excitation, which diminishes with an increase in Ge content, yielding Ge-Se bond breakage at x≈30%. Further, an increase in Ge concentration (x>30%) favors breakage of the Ge-Ge bonds upon photoexcitation and formation of light-induced 3D nanostructures. The bond conversion process is verified by Raman analysis.
UR - https://scholarworks.boisestate.edu/physics_facpubs/162
UR - http://dx.doi.org/10.1364/OME.5.000295
UR - http://www.scopus.com/inward/record.url?scp=84921823796&partnerID=8YFLogxK
U2 - 10.1364/OME.5.000295
DO - 10.1364/OME.5.000295
M3 - Article
VL - 5
SP - 295
EP - 306
JO - Physics Faculty Publications and Presentations
JF - Physics Faculty Publications and Presentations
IS - 2
ER -