TY - JOUR
T1 - Effect of Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films
AU - Reddy, K. M.
AU - Hays, J.
AU - Kundu, S.
AU - Dua, L. K.
AU - Biswas, P. K.
AU - Wang, C.
AU - Shutthanandan, V.
AU - Engelhard, M. H.
AU - Mathew, X.
AU - Punnoose, A.
PY - 2007/12
Y1 - 2007/12
N2 - We report on the preparation and characterization of high purity manganese (3-9 wt.%) doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol-gel mediated dip coating. X-ray diffraction and selected area electron diffraction showed high phase purity cubic In 2O 3 and indicated a contraction of the lattice with Mn doping. High-resolution transmission electron microscopy depicted a uniform distribution of ∼20 nm sized independent particles and particle induced x-ray emission studies confirmed the actual Mn ion concentration. UV-Vis diffuse reflectance measurements showed band gap energy of 3.75 eV and a high degree of optical transparency (90%) in the 100-500 nm thick ITO films. X-ray photoelectron spectroscopy core level binding energies for In 3d 5/2 (443.6 eV), Sn 3d 5/2 (485.6 eV) and Mn 2p 3/2 (640.2 eV) indicated the In 3+, Sn 4+ and Mn 2+ oxidation states. Magnetic hysteresis loops recorded at 300 K yield a coercivity H c ∼ 80 Oe and saturation magnetization M s ∼ 0.39 μ B/Mn 2+ ion. High-temperature magnetometry showed a Curie temperature T c > 600 K for the 3.2% Mn doped ITO film.
AB - We report on the preparation and characterization of high purity manganese (3-9 wt.%) doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol-gel mediated dip coating. X-ray diffraction and selected area electron diffraction showed high phase purity cubic In 2O 3 and indicated a contraction of the lattice with Mn doping. High-resolution transmission electron microscopy depicted a uniform distribution of ∼20 nm sized independent particles and particle induced x-ray emission studies confirmed the actual Mn ion concentration. UV-Vis diffuse reflectance measurements showed band gap energy of 3.75 eV and a high degree of optical transparency (90%) in the 100-500 nm thick ITO films. X-ray photoelectron spectroscopy core level binding energies for In 3d 5/2 (443.6 eV), Sn 3d 5/2 (485.6 eV) and Mn 2p 3/2 (640.2 eV) indicated the In 3+, Sn 4+ and Mn 2+ oxidation states. Magnetic hysteresis loops recorded at 300 K yield a coercivity H c ∼ 80 Oe and saturation magnetization M s ∼ 0.39 μ B/Mn 2+ ion. High-temperature magnetometry showed a Curie temperature T c > 600 K for the 3.2% Mn doped ITO film.
UR - https://www.scopus.com/pages/publications/34548689888
U2 - 10.1007/s10854-007-9277-6
DO - 10.1007/s10854-007-9277-6
M3 - Article
AN - SCOPUS:34548689888
SN - 0957-4522
VL - 18
SP - 1197
EP - 1201
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 12
ER -