Effect of O2Exposure on Silicon Field Emitter Arrays Style

Reza Farsad Asadi; Tao Zheng; Girish Rughoobur; Ranajoy Bhattacharya; Jim Browning; Akintunde I. Akinwande; Bruce Gnade

doi:10.1109/IVNC57695.2023.10188971

Effect of O₂Exposure on Silicon Field Emitter Arrays Style

Reza Farsad Asadi, Tao Zheng, Girish Rughoobur, Ranajoy Bhattacharya, Jim Browning, Akintunde I. Akinwande, Bruce Gnade

Electrical Engineering Department

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The impact of Oxygen (O2) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10-10 Torr before 10-7 Torr partial pressure of O2 was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O2 exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.

Original language	English
Title of host publication	36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	134-136
Number of pages	3
ISBN (Electronic)	9798350301434
DOIs	https://doi.org/10.1109/IVNC57695.2023.10188971
State	Published - 2023
Event	36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023 - Cambridge, United States Duration: 10 Jul 2023 → 13 Jul 2023

Publication series

Name	36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023

Conference

Conference	36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023
Country/Territory	United States
City	Cambridge
Period	10/07/23 → 13/07/23

Keywords

Accelerated life testing
O2 exposure
Reliability
Silicon Field Emitter Arrays (Si-FEA)
Vacuum packaging

Access to Document

10.1109/IVNC57695.2023.10188971

Cite this

Asadi, R. F., Zheng, T., Rughoobur, G., Bhattacharya, R., Browning, J., Akinwande, A. I., & Gnade, B. (2023). Effect of O₂Exposure on Silicon Field Emitter Arrays Style. In 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023 (pp. 134-136). (36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC57695.2023.10188971

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title = "Effect of O2Exposure on Silicon Field Emitter Arrays Style",

abstract = "The impact of Oxygen (O2) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10-10 Torr before 10-7 Torr partial pressure of O2 was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O2 exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.",

keywords = "Accelerated life testing, O2 exposure, Reliability, Silicon Field Emitter Arrays (Si-FEA), Vacuum packaging",

author = "Asadi, {Reza Farsad} and Tao Zheng and Girish Rughoobur and Ranajoy Bhattacharya and Jim Browning and Akinwande, {Akintunde I.} and Bruce Gnade",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023 ; Conference date: 10-07-2023 Through 13-07-2023",

year = "2023",

doi = "10.1109/IVNC57695.2023.10188971",

language = "English",

series = "36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023",

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Asadi, RF, Zheng, T, Rughoobur, G, Bhattacharya, R, Browning, J, Akinwande, AI & Gnade, B 2023, Effect of O₂Exposure on Silicon Field Emitter Arrays Style. in 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023. 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023, Institute of Electrical and Electronics Engineers Inc., pp. 134-136, 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023, Cambridge, United States, 10/07/23. https://doi.org/10.1109/IVNC57695.2023.10188971

Effect of O₂Exposure on Silicon Field Emitter Arrays Style. / Asadi, Reza Farsad; Zheng, Tao; Rughoobur, Girish et al.
36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 134-136 (36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Asadi, Reza Farsad

AU - Zheng, Tao

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AU - Akinwande, Akintunde I.

AU - Gnade, Bruce

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AB - The impact of Oxygen (O2) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10-10 Torr before 10-7 Torr partial pressure of O2 was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O2 exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.

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Asadi RF, Zheng T, Rughoobur G, Bhattacharya R, Browning J, Akinwande AI et al. Effect of O₂Exposure on Silicon Field Emitter Arrays Style. In 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 134-136. (36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023). doi: 10.1109/IVNC57695.2023.10188971