@inproceedings{b806d1e9532b4b07b6410f73d0f4dee9,
title = "Effect of O2Exposure on Silicon Field Emitter Arrays Style",
abstract = "The impact of Oxygen (O2) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10-10 Torr before 10-7 Torr partial pressure of O2 was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O2 exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.",
keywords = "Accelerated life testing, O2 exposure, Reliability, Silicon Field Emitter Arrays (Si-FEA), Vacuum packaging",
author = "Asadi, \{Reza Farsad\} and Tao Zheng and Girish Rughoobur and Ranajoy Bhattacharya and Jim Browning and Akinwande, \{Akintunde I.\} and Bruce Gnade",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023 ; Conference date: 10-07-2023 Through 13-07-2023",
year = "2023",
doi = "10.1109/IVNC57695.2023.10188971",
language = "English",
series = "36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "134--136",
booktitle = "36th IEEE International Vacuum Nanoelectronics Conference, IVNC 2023",
address = "United States",
}