Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba 0.5Sr 0.5TiO 3 thin films studied by Raman spectroscopy

D. A. Tenne; A. Soukiassian; X. X. Xi; T. R. Taylor; P. J. Hansen; J. S. Speck; R. A. York

doi:10.1063/1.1813625

Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba _0.5Sr _0.5TiO ₃ thin films studied by Raman spectroscopy

D. A. Tenne, A. Soukiassian, X. X. Xi, T. R. Taylor, P. J. Hansen, J. S. Speck, R. A. York

Physics Department

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We have applied Raman spectroscopy to study the influence of thermal strain on the vibrational properties of polycrystalline Ba _0.5Sr _0.5TiO ₃ films. The films were grown by rf magnetron sputtering on Pt/SiO ₂ surface using different host substrates: strontium titanate, sapphire, silicon, and vycor glass. These substrates provide a systematic change in the thermal strain while maintaining the same film microstructure. From the temperature dependence of the ferroelectric A ₁ soft phonon intensity, the ferroelectric phase transition temperature, T _c, was determined. We found that T _c decreases with increasing tensile stress in the films. This dependence is different from the theoretical predictions for epitaxial ferroelectric films. The reduction of the ferroelectric transition temperature with increasing biaxial tensile strain is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films.

Original language	English
Pages (from-to)	4124-4126
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	18
DOIs	https://doi.org/10.1063/1.1813625
State	Published - 1 Nov 2004

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title = "Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba 0.5Sr 0.5TiO 3 thin films studied by Raman spectroscopy",

abstract = "We have applied Raman spectroscopy to study the influence of thermal strain on the vibrational properties of polycrystalline Ba 0.5Sr 0.5TiO 3 films. The films were grown by rf magnetron sputtering on Pt/SiO 2 surface using different host substrates: strontium titanate, sapphire, silicon, and vycor glass. These substrates provide a systematic change in the thermal strain while maintaining the same film microstructure. From the temperature dependence of the ferroelectric A 1 soft phonon intensity, the ferroelectric phase transition temperature, T c, was determined. We found that T c decreases with increasing tensile stress in the films. This dependence is different from the theoretical predictions for epitaxial ferroelectric films. The reduction of the ferroelectric transition temperature with increasing biaxial tensile strain is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films.",

author = "Tenne, {D. A.} and A. Soukiassian and Xi, {X. X.} and Taylor, {T. R.} and Hansen, {P. J.} and Speck, {J. S.} and York, {R. A.}",

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T1 - Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba 0.5Sr 0.5TiO 3 thin films studied by Raman spectroscopy

AU - Tenne, D. A.

AU - Soukiassian, A.

AU - Xi, X. X.

AU - Taylor, T. R.

AU - Hansen, P. J.

AU - Speck, J. S.

AU - York, R. A.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - We have applied Raman spectroscopy to study the influence of thermal strain on the vibrational properties of polycrystalline Ba 0.5Sr 0.5TiO 3 films. The films were grown by rf magnetron sputtering on Pt/SiO 2 surface using different host substrates: strontium titanate, sapphire, silicon, and vycor glass. These substrates provide a systematic change in the thermal strain while maintaining the same film microstructure. From the temperature dependence of the ferroelectric A 1 soft phonon intensity, the ferroelectric phase transition temperature, T c, was determined. We found that T c decreases with increasing tensile stress in the films. This dependence is different from the theoretical predictions for epitaxial ferroelectric films. The reduction of the ferroelectric transition temperature with increasing biaxial tensile strain is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films.

AB - We have applied Raman spectroscopy to study the influence of thermal strain on the vibrational properties of polycrystalline Ba 0.5Sr 0.5TiO 3 films. The films were grown by rf magnetron sputtering on Pt/SiO 2 surface using different host substrates: strontium titanate, sapphire, silicon, and vycor glass. These substrates provide a systematic change in the thermal strain while maintaining the same film microstructure. From the temperature dependence of the ferroelectric A 1 soft phonon intensity, the ferroelectric phase transition temperature, T c, was determined. We found that T c decreases with increasing tensile stress in the films. This dependence is different from the theoretical predictions for epitaxial ferroelectric films. The reduction of the ferroelectric transition temperature with increasing biaxial tensile strain is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba _0.5Sr _0.5TiO ₃ thin films studied by Raman spectroscopy

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