TY - GEN
T1 - Effect of Ultra Violet Light on Planar Field Emitters
AU - Bhattacharya, Ranajoy
AU - Turchetti, Marco
AU - Keithley, P. Donald
AU - Berggren, Karl K.
AU - Browning, Jim
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Two different types of planar nano-scale (4-5 nm) field emitters, bowtie and diode devices, were characterized for use as electron sources for vacuum nano-transistors. I-V measurements were performed before and after Ultra-violet (UV) light exposure. Experiments showed that the field emission current was 2.7 nA before the UV exposure and was 1.8 nA after the exposure for the bow-die devices. Experiments also showed that the field emission current was 5.6 nA before the UV exposure and was 3.6 nA after the exposure for the diode devices. This reduction in current could be attributed to the removal of water vapor by UV exposure resulting in the reduction in the surface leakage current. A long-term stability tests conducted after the UV exposure showed both the bow-tie and diode devices emitted a stable current (<5% drop) for > 1100 hrs. of continuous operation at a DC bias of 5 V.
AB - Two different types of planar nano-scale (4-5 nm) field emitters, bowtie and diode devices, were characterized for use as electron sources for vacuum nano-transistors. I-V measurements were performed before and after Ultra-violet (UV) light exposure. Experiments showed that the field emission current was 2.7 nA before the UV exposure and was 1.8 nA after the exposure for the bow-die devices. Experiments also showed that the field emission current was 5.6 nA before the UV exposure and was 3.6 nA after the exposure for the diode devices. This reduction in current could be attributed to the removal of water vapor by UV exposure resulting in the reduction in the surface leakage current. A long-term stability tests conducted after the UV exposure showed both the bow-tie and diode devices emitted a stable current (<5% drop) for > 1100 hrs. of continuous operation at a DC bias of 5 V.
KW - field emission characterization
KW - long term stability characterization
KW - Planar field emitters
UR - http://www.scopus.com/inward/record.url?scp=85165946709&partnerID=8YFLogxK
U2 - 10.1109/IVEC56627.2023.10157720
DO - 10.1109/IVEC56627.2023.10157720
M3 - Conference contribution
AN - SCOPUS:85165946709
T3 - 2023 24th International Vacuum Electronics Conference, IVEC 2023
BT - 2023 24th International Vacuum Electronics Conference, IVEC 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th International Vacuum Electronics Conference, IVEC 2023
Y2 - 25 April 2023 through 28 April 2023
ER -