Abstract
CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×10 13 n/cm 2 . This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×10 13 n/cm 2 , the CBRAM cells became irrecoverably locked into their final resistance state.
Original language | American English |
---|---|
Title of host publication | 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS) |
DOIs | |
State | Published - 1 Jan 2016 |
Keywords
- CBRAM
- ECM
- cation
- chalcogenide glass
- conductive bridging
- displacement damage
EGS Disciplines
- Electrical and Computer Engineering