Effects of 14 MeV Neutron Irradiation on the DC Characteristics of CBRAM Cells

M. Mitkova

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Scopus citations

Abstract

CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×10 13 n/cm 2 . This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×10 13 n/cm 2 , the CBRAM cells became irrecoverably locked into their final resistance state.

Original languageAmerican English
Title of host publication2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
DOIs
StatePublished - 1 Jan 2016

Keywords

  • CBRAM
  • ECM
  • cation
  • chalcogenide glass
  • conductive bridging
  • displacement damage

EGS Disciplines

  • Electrical and Computer Engineering

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