@inproceedings{c48d70652d3a45f891d9cf611bde415c,
title = "Effects of amorphous layer regrowth on carbon activation in GaAs and InP",
abstract = "The effect of the Ga dose on the activation of implanted carbon in GaAs is determined. The free hole concentration is found to depend on the depth of the amorphous layer created by the Ga co-implant. Initial results on C implantation in InP indicate the behavior of C is very different in InP when compared to GaAs. The role of precipitation in reducing the activation of C in both GaAs and InP is discussed.",
author = "Moll, {A. J.} and Ager, {J. W.} and Yu, {K. M.} and W. Walukiewicz and Haller, {E. E.}",
year = "1994",
language = "English",
isbn = "1558992154",
series = "Materials Research Society Symposium Proceedings",
pages = "325--330",
editor = "Garito, {Anthony F.} and Jen, {Alex K-Y.} and Lee, {Charles Y-C.} and Dalton, {Larry R.}",
booktitle = "Materials Synthesis and Processing Using Ion Beams",
note = "Proceedings of the MRS 1993 Fall Meeting ; Conference date: 29-11-1993 Through 03-12-1993",
}