Effects of Ultra Violet Light Exposure on Gated Sillicon Field Emitter Arrays

Ranajoy Bhattacharya; Mason Canon; Nedeljko Karaulac; Girish Rughoobur; Winston Chern; Akintunde I. Akinwande; Jim Browning

Effects of Ultra Violet Light Exposure on Gated Sillicon Field Emitter Arrays

Ranajoy Bhattacharya, Mason Canon, Nedeljko Karaulac, Girish Rughoobur, Winston Chern, Akintunde I. Akinwande, Jim Browning

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Ultra violet (UV) light assisted residual gas desorption was performed on silicon gated field emitter array (Si-GFEAs) with 1000×1000 tips. These GFEAs can be used as vacuum nano-transistors. Here, Si-GFEAs with tips are studied experimentally in normal condition as well as under ultra-violet (UV) light exposure for a period of 100 minutes with a time step of 20 minutes. After the experiment, it was found that UV exposure enhanced the field emission current by tenfold and decreased the gate to emitter leakage by greater than ten times. This enhancement can be attributed to the residual gas desorption (water) stimulated by UV exposure, thus reducing the gate surface leakage as well as the work function of emitter tips.

Original language	American English
Title of host publication	2021 34th International Vacuum Nanoelectronics Conference (IVNC)
State	Published - 1 Jan 2021

Keywords

atmosphere
field emitter arrays
lighting
logic gates
nanoelectronics
silicon
ultraviolet sources

EGS Disciplines

Electrical and Computer Engineering

Access to Document

https://doi.org/10.1109/IVNC52431.2021.9600783

Cite this

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title = "Effects of Ultra Violet Light Exposure on Gated Sillicon Field Emitter Arrays",

abstract = " Ultra violet (UV) light assisted residual gas desorption was performed on silicon gated field emitter array (Si-GFEAs) with 1000×1000 tips. These GFEAs can be used as vacuum nano-transistors. Here, Si-GFEAs with tips are studied experimentally in normal condition as well as under ultra-violet (UV) light exposure for a period of 100 minutes with a time step of 20 minutes. After the experiment, it was found that UV exposure enhanced the field emission current by tenfold and decreased the gate to emitter leakage by greater than ten times. This enhancement can be attributed to the residual gas desorption (water) stimulated by UV exposure, thus reducing the gate surface leakage as well as the work function of emitter tips.",

keywords = "atmosphere, field emitter arrays, lighting, logic gates, nanoelectronics, silicon, ultraviolet sources",

author = "Ranajoy Bhattacharya and Mason Canon and Nedeljko Karaulac and Girish Rughoobur and Winston Chern and Akinwande, \{Akintunde I.\} and Jim Browning",

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TY - CHAP

T1 - Effects of Ultra Violet Light Exposure on Gated Sillicon Field Emitter Arrays

AU - Bhattacharya, Ranajoy

AU - Canon, Mason

AU - Karaulac, Nedeljko

AU - Rughoobur, Girish

AU - Chern, Winston

AU - Akinwande, Akintunde I.

AU - Browning, Jim

PY - 2021/1/1

Y1 - 2021/1/1

N2 - Ultra violet (UV) light assisted residual gas desorption was performed on silicon gated field emitter array (Si-GFEAs) with 1000×1000 tips. These GFEAs can be used as vacuum nano-transistors. Here, Si-GFEAs with tips are studied experimentally in normal condition as well as under ultra-violet (UV) light exposure for a period of 100 minutes with a time step of 20 minutes. After the experiment, it was found that UV exposure enhanced the field emission current by tenfold and decreased the gate to emitter leakage by greater than ten times. This enhancement can be attributed to the residual gas desorption (water) stimulated by UV exposure, thus reducing the gate surface leakage as well as the work function of emitter tips.

AB - Ultra violet (UV) light assisted residual gas desorption was performed on silicon gated field emitter array (Si-GFEAs) with 1000×1000 tips. These GFEAs can be used as vacuum nano-transistors. Here, Si-GFEAs with tips are studied experimentally in normal condition as well as under ultra-violet (UV) light exposure for a period of 100 minutes with a time step of 20 minutes. After the experiment, it was found that UV exposure enhanced the field emission current by tenfold and decreased the gate to emitter leakage by greater than ten times. This enhancement can be attributed to the residual gas desorption (water) stimulated by UV exposure, thus reducing the gate surface leakage as well as the work function of emitter tips.

KW - atmosphere

KW - field emitter arrays

KW - lighting

KW - logic gates

KW - nanoelectronics

KW - silicon

KW - ultraviolet sources

UR - https://scholarworks.boisestate.edu/electrical_facpubs/534

UR - https://doi.org/10.1109/IVNC52431.2021.9600783

M3 - Chapter

BT - 2021 34th International Vacuum Nanoelectronics Conference (IVNC)

ER -

Effects of Ultra Violet Light Exposure on Gated Sillicon Field Emitter Arrays

Abstract

Keywords

EGS Disciplines

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