Electrical characterization of through-wafer interconnects

T. E. Lawrence; S. M. Donovan; W. B. Knowlton; J. Rush-Byers; A. J. Moll

Electrical characterization of through-wafer interconnects

T. E. Lawrence, S. M. Donovan, W. B. Knowlton, J. Rush-Byers, A. J. Moll

Micron School of Materials Science and Engineering

Boise State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

Through-wafer interconnects (TWI) allows 3-D chip stacking enabling integration of multiple chip functions (i.e. opto-electronic, analog or digital) with reduced power and space requirements. To date, non-destructive characterization techniques for determining interconnect integrity and reliability have not been developed. This work examines a specially modified electrical four-point probe for non-destructive characterization of TWI's. Technical challenges and measurement optimization methods are reported.

Original language	English
Title of host publication	2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004
Subtitle of host publication	IEEE Electron Devices 2nd Northwest Regional Meeting
Pages	99-102
Number of pages	4
State	Published - 2004
Event	2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting - Boise, ID, United States Duration: 16 Apr 2004 → 16 Apr 2004

Publication series

Name	IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting

Conference

Conference	2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting
Country/Territory	United States
City	Boise, ID
Period	16/04/04 → 16/04/04

Keywords

3-D stacking
Through-wafer interconnects (TWI)

Cite this

Lawrence, T. E., Donovan, S. M., Knowlton, W. B., Rush-Byers, J., & Moll, A. J. (2004). Electrical characterization of through-wafer interconnects. In 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices 2nd Northwest Regional Meeting (pp. 99-102). (IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting).

Lawrence, T. E. ; Donovan, S. M. ; Knowlton, W. B. et al. / Electrical characterization of through-wafer interconnects. 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices 2nd Northwest Regional Meeting. 2004. pp. 99-102 (IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting).

@inproceedings{802da784d2f1471baf947de4ca7c62c9,

title = "Electrical characterization of through-wafer interconnects",

abstract = "Through-wafer interconnects (TWI) allows 3-D chip stacking enabling integration of multiple chip functions (i.e. opto-electronic, analog or digital) with reduced power and space requirements. To date, non-destructive characterization techniques for determining interconnect integrity and reliability have not been developed. This work examines a specially modified electrical four-point probe for non-destructive characterization of TWI's. Technical challenges and measurement optimization methods are reported.",

keywords = "3-D stacking, Through-wafer interconnects (TWI)",

author = "Lawrence, {T. E.} and Donovan, {S. M.} and Knowlton, {W. B.} and J. Rush-Byers and Moll, {A. J.}",

year = "2004",

language = "English",

isbn = "0780383699",

series = "IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting",

pages = "99--102",

booktitle = "2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004",

note = "2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting ; Conference date: 16-04-2004 Through 16-04-2004",

}

Lawrence, TE, Donovan, SM, Knowlton, WB, Rush-Byers, J & Moll, AJ 2004, Electrical characterization of through-wafer interconnects. in 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices 2nd Northwest Regional Meeting. IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting, pp. 99-102, 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting, Boise, ID, United States, 16/04/04.

Electrical characterization of through-wafer interconnects. / Lawrence, T. E.; Donovan, S. M.; Knowlton, W. B. et al.
2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices 2nd Northwest Regional Meeting. 2004. p. 99-102 (IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical characterization of through-wafer interconnects

AU - Lawrence, T. E.

AU - Donovan, S. M.

AU - Knowlton, W. B.

AU - Rush-Byers, J.

AU - Moll, A. J.

PY - 2004

Y1 - 2004

N2 - Through-wafer interconnects (TWI) allows 3-D chip stacking enabling integration of multiple chip functions (i.e. opto-electronic, analog or digital) with reduced power and space requirements. To date, non-destructive characterization techniques for determining interconnect integrity and reliability have not been developed. This work examines a specially modified electrical four-point probe for non-destructive characterization of TWI's. Technical challenges and measurement optimization methods are reported.

AB - Through-wafer interconnects (TWI) allows 3-D chip stacking enabling integration of multiple chip functions (i.e. opto-electronic, analog or digital) with reduced power and space requirements. To date, non-destructive characterization techniques for determining interconnect integrity and reliability have not been developed. This work examines a specially modified electrical four-point probe for non-destructive characterization of TWI's. Technical challenges and measurement optimization methods are reported.

KW - 3-D stacking

KW - Through-wafer interconnects (TWI)

UR - http://www.scopus.com/inward/record.url?scp=3042614126&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:3042614126

SN - 0780383699

SN - 9780780383692

T3 - IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting

SP - 99

EP - 102

BT - 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004

T2 - 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting

Y2 - 16 April 2004 through 16 April 2004

ER -

Lawrence TE, Donovan SM, Knowlton WB, Rush-Byers J, Moll AJ. Electrical characterization of through-wafer interconnects. In 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices 2nd Northwest Regional Meeting. 2004. p. 99-102. (IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting).

Electrical characterization of through-wafer interconnects

Abstract

Publication series

Conference

Keywords

Other files and links

Fingerprint

Cite this