Electron Beam Effects in Ge–Se Thin Films and Resistance Change Memory Devices

Kasandra Wolf, Hugh Barnaby, Mahesh S. Ailavajhala, Micahel N. Kozicki, Dmitri A. Tenne, Maria Mitkova

Research output: Contribution to journal › Article › peer-review

Original language	American English
Journal	Physics Faculty Publications and Presentations
State	Published - 1 Jun 2016

Keywords

@article{f569ee86a55e468f8cca958423098888,

title = "Electron Beam Effects in Ge–Se Thin Films and Resistance Change Memory Devices",

keywords = "amorphous, composition, current voltage characteristics",

author = "Kasandra Wolf and Hugh Barnaby and Ailavajhala, {Mahesh S.} and Kozicki, {Micahel N.} and Tenne, {Dmitri A.} and Maria Mitkova",

year = "2016",

month = jun,

day = "1",

language = "American English",

}

TY - JOUR

T1 - Electron Beam Effects in Ge–Se Thin Films and Resistance Change Memory Devices

AU - Wolf, Kasandra

AU - Barnaby, Hugh

AU - Ailavajhala, Mahesh S.

AU - Kozicki, Micahel N.

AU - Tenne, Dmitri A.

AU - Mitkova, Maria

PY - 2016/6/1

Y1 - 2016/6/1

KW - amorphous

KW - composition

KW - current voltage characteristics

UR - https://scholarworks.boisestate.edu/physics_facpubs/193

M3 - Article

JO - Physics Faculty Publications and Presentations

JF - Physics Faculty Publications and Presentations

ER -