Abstract
The increasing transition temperature (To) in MgB2 films deposited by hybrid physical-chemical vapor deposition (HPCVD) was analyzed. Investigations show that the Tc increased due to the softening of bond-stretching E2g phonon mode. The increased T c was observed in the epitaxial films of SiC and sapphire substrates. The results show that the E2g phonon softening was a possible avenue to achieve higher Tc in MgB2-related material systems.
| Original language | English |
|---|---|
| Article number | 147006 |
| Pages (from-to) | 147006-1-147006-4 |
| Journal | Physical Review Letters |
| Volume | 93 |
| Issue number | 14 |
| DOIs | |
| State | Published - 1 Oct 2004 |
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