Abstract
The transitions from a bilayer state to a monolayer state in an asymmetric double quantum well system were investigated. The layer densities were determined from the low field oscillations and the total density was determined from the low field Hall effects. The individual layer densities and the total density were plotted as a function of front-gate bias voltage. the results showed that the transitions occurred due to the negative compressibility of the low density carriers systems and the layer imbalance caused by external gate biases.
Original language | English |
---|---|
Pages (from-to) | 304-306 |
Number of pages | 3 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 12 |
Issue number | 1-4 |
DOIs | |
State | Published - Jan 2002 |
Event | 14th International Conference on the - Prague, Czech Republic Duration: 30 Jul 2001 → 3 Aug 2001 |
Keywords
- Bilayers
- Double quantum wells
- Magnetoresistance