Ferroelectricity in Non-Stoichiometric SrTiO3 Films Studied by Ultraviolet Raman Spectroscopy

Dmitri A. Tenne; A. K. Farrar

doi:10.1063/1.3499273

Ferroelectricity in Non-Stoichiometric SrTiO₃ Films Studied by Ultraviolet Raman Spectroscopy

Dmitri A. Tenne, A. K. Farrar

Physics Department

Boise State University

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66 Scopus citations

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Abstract

Homoepitaxial Sr _{1+ x} TiO _3+δ films with -0.2 ≤ x ≤ 0.25 grown by reactive molecular-beam epitaxy on SrTiO ₃ (001) substrates have been studied by ultraviolet Raman spectroscopy. Non-stoichiometry for strontium- deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. Strontium-rich samples also show a strong first-order Raman signal, but the peaks are significantly broader and exhibit a less pronounced temperature dependence, indicating a stronger contribution of the disorder- activated mechanism in Raman scattering.

Original language	American English
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.3499273
State	Published - 4 Oct 2010

Keywords

dielectric polarisation
ferroelectric materials
ferroelectric thin films
ferroelectric transitions
molecular beam epitaxial growth

EGS Disciplines

Physics

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Cite this

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title = "Ferroelectricity in Non-Stoichiometric SrTiO3 Films Studied by Ultraviolet Raman Spectroscopy",

abstract = " Homoepitaxial Sr 1+ x TiO 3+δ films with -0.2 ≤ x ≤ 0.25 grown by reactive molecular-beam epitaxy on SrTiO 3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Non-stoichiometry for strontium- deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. Strontium-rich samples also show a strong first-order Raman signal, but the peaks are significantly broader and exhibit a less pronounced temperature dependence, indicating a stronger contribution of the disorder- activated mechanism in Raman scattering.",

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author = "Tenne, {Dmitri A.} and Farrar, {A. K.}",

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T1 - Ferroelectricity in Non-Stoichiometric SrTiO3 Films Studied by Ultraviolet Raman Spectroscopy

AU - Tenne, Dmitri A.

AU - Farrar, A. K.

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Y1 - 2010/10/4

N2 - Homoepitaxial Sr 1+ x TiO 3+δ films with -0.2 ≤ x ≤ 0.25 grown by reactive molecular-beam epitaxy on SrTiO 3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Non-stoichiometry for strontium- deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. Strontium-rich samples also show a strong first-order Raman signal, but the peaks are significantly broader and exhibit a less pronounced temperature dependence, indicating a stronger contribution of the disorder- activated mechanism in Raman scattering.

AB - Homoepitaxial Sr 1+ x TiO 3+δ films with -0.2 ≤ x ≤ 0.25 grown by reactive molecular-beam epitaxy on SrTiO 3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Non-stoichiometry for strontium- deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. Strontium-rich samples also show a strong first-order Raman signal, but the peaks are significantly broader and exhibit a less pronounced temperature dependence, indicating a stronger contribution of the disorder- activated mechanism in Raman scattering.

KW - dielectric polarisation

KW - ferroelectric materials

KW - ferroelectric thin films

KW - ferroelectric transitions

KW - molecular beam epitaxial growth

UR - https://scholarworks.boisestate.edu/physics_facpubs/22

U2 - 10.1063/1.3499273

DO - 10.1063/1.3499273

M3 - Article

JO - Applied Physics Letters

JF - Applied Physics Letters

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