Ferroelectricity in Strain-Free SrTiO3 Thin Films

  • H. W. Jang
  • , A. Kumar
  • , S. Denev
  • , M. D. Biegalski
  • , P. Maksymovych
  • , C. W. Bark
  • , C. T. Nelson
  • , C. M. Folkman
  • , S. H. Baek
  • , N. Balke
  • , C. M. Brooks
  • , D. A. Tenne
  • , D. G. Schlom
  • , L. Q. Chen
  • , X. Q. Pan
  • , S. V. Kalinin
  • , V. Gopalan
  • , C. B. Eom

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Abstract

Biaxial strain is known to induce ferroelectricity in thin films of nominally non-ferroelectric materials such as SrTiO 3 . However, even strain-free SrTiO 3 films and the paraelectric phase of strained films exhibit bulk frequency-dependent polarization hysteresis loops on the nanoscale at room temperature, and stable switchable domains at 50 K. By a direct comparison of the strained and strain-free SrTiO 3 films using dielectric, ferroelectric, Raman, nonlinear optical and nanoscale piezoelectric property measurements, we conclude that SrTiO 3 films and bulk crystals are relaxor ferroelectrics, and the role of strain is to stabilize longer-range correlation of preexisting nanopolar regions, likely originating from minute amounts of unintentional Sr-deficiency in nominally stoichiometric samples. These findings highlight the sensitive role of stoichiometry when exploring strain and epitaxy-induced electronic phenomena in oxide films, heterostructures, and interfaces.

Original languageAmerican English
Article number197601
JournalPhysical Review Letters
Volume104
Issue number19
DOIs
StatePublished - 14 May 2010

EGS Disciplines

  • Physics

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