TY - GEN
T1 - Field Emission Characteristics of GaN Arrays
AU - Bhattacharya, Ranajoy
AU - Shih, Pao Chuan
AU - Palacios, Tomas
AU - Browning, Jim
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - GaN field emitter arrays are being studied for use as vacuum channel transistors (VCTs). In this work, arrays of 150 x 150 GaN field emitters were characterized before and after UV exposure. Collector voltage was kept at 200V DC, and the gate voltage was swept from 0 to 60V. From the I-V measurements, a jump in emission current, a form of conditioning, was observed after a few voltage sweeps resulting in a stable emission current. After UV exposure at 185 nm with 350μW/cm2, 5 times increase in current was observed, reaching a maximum field emission current of 6μA.
AB - GaN field emitter arrays are being studied for use as vacuum channel transistors (VCTs). In this work, arrays of 150 x 150 GaN field emitters were characterized before and after UV exposure. Collector voltage was kept at 200V DC, and the gate voltage was swept from 0 to 60V. From the I-V measurements, a jump in emission current, a form of conditioning, was observed after a few voltage sweeps resulting in a stable emission current. After UV exposure at 185 nm with 350μW/cm2, 5 times increase in current was observed, reaching a maximum field emission current of 6μA.
KW - field emission characterization
KW - GaN field emitter
KW - UV exposure
UR - http://www.scopus.com/inward/record.url?scp=85178502826&partnerID=8YFLogxK
U2 - 10.1109/IVEC53421.2022.10292245
DO - 10.1109/IVEC53421.2022.10292245
M3 - Conference contribution
AN - SCOPUS:85178502826
T3 - 2022 23rd International Vacuum Electronics Conference, IVEC 2022
SP - 142
EP - 143
BT - 2022 23rd International Vacuum Electronics Conference, IVEC 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 23rd International Vacuum Electronics Conference, IVEC 2022
Y2 - 25 April 2022 through 29 April 2022
ER -