TY - GEN
T1 - Field Emitter Failure Mechanisms and Harsh Environment Robustness Studies
AU - Bhattacharjee, Rushmita
AU - Oberbeck, Cody
AU - West, Jake
AU - Segura Del Rio, Cesar Weasley
AU - Chern, Winston
AU - Karaulac, Nedeljko
AU - Rughoobur, Girish
AU - Turchetti, Marco
AU - Yeung, Matthew
AU - Nardi, Alberto
AU - Britton, Wesley
AU - Negro, Luca Dal
AU - Bhattacharya, Ranajoy
AU - Keathley, Phillip D.
AU - Berggren, Karl K.
AU - Akinwande, Akintunde I.
AU - Browning, Jim
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Modern day field emitters can fail due to several mechanisms that are not well understood. This paper presents experiments that aim to identify the mechanisms behind failure. Two types of devices, Silicon gated field emitter arrays (SiGFEAs) and Titanium Silicon Oxy Nitride (TiSiON) lateral field emitter devices were characterized experimentally. Si-GFEAs were tested for arc occurrence time for a fixed gate voltage of 50 V and a fixed collector voltage of 200 V. The emitter was grounded. Initial results from the temporal response experiment show that the emitter experiences arcing first. However, future experiments will provide an accurate identification of the arc initiating electrode. For the planar device, a diode was chosen and IV characterization was performed at 50 °C and 400 °C. Experiments showed that for an applied collector voltage of 10 V, the field emission current was ≈ 5.5 nA before the heat treatment and was ≈ 2.75 nA after the 400 °C heat treatment. This reduction in current could be attributed to the removal of water vapor by heat treatment resulting in the reduction in the surface leakage current.
AB - Modern day field emitters can fail due to several mechanisms that are not well understood. This paper presents experiments that aim to identify the mechanisms behind failure. Two types of devices, Silicon gated field emitter arrays (SiGFEAs) and Titanium Silicon Oxy Nitride (TiSiON) lateral field emitter devices were characterized experimentally. Si-GFEAs were tested for arc occurrence time for a fixed gate voltage of 50 V and a fixed collector voltage of 200 V. The emitter was grounded. Initial results from the temporal response experiment show that the emitter experiences arcing first. However, future experiments will provide an accurate identification of the arc initiating electrode. For the planar device, a diode was chosen and IV characterization was performed at 50 °C and 400 °C. Experiments showed that for an applied collector voltage of 10 V, the field emission current was ≈ 5.5 nA before the heat treatment and was ≈ 2.75 nA after the 400 °C heat treatment. This reduction in current could be attributed to the removal of water vapor by heat treatment resulting in the reduction in the surface leakage current.
KW - Si-GFEA
KW - arc detection
KW - high temperature treatment
KW - planar field emitters
UR - https://www.scopus.com/pages/publications/85207071435
U2 - 10.1109/IVECIVESC60838.2024.10694979
DO - 10.1109/IVECIVESC60838.2024.10694979
M3 - Conference contribution
AN - SCOPUS:85207071435
T3 - 2024 Joint International Vacuum Electronics Conference and International Vacuum Electron Sources Conference, IVEC + IVESC 2024
BT - 2024 Joint International Vacuum Electronics Conference and International Vacuum Electron Sources Conference, IVEC + IVESC 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 25th Joint IEEE International Vacuum Electronics Conference and 15th International Vacuum Electron Sources Conference, IVEC + IVESC 2024
Y2 - 23 April 2024 through 25 April 2024
ER -