TY - JOUR
T1 - Fluorine doping in dilute magnetic semiconductor Sn 1-x Fe xO 2
AU - Thurber, Aaron
AU - Hays, Jason
AU - Reddy, K. M.
AU - Shutthanandan, V.
AU - Punnoose, Alex
PY - 2007/11
Y1 - 2007/11
N2 - Recent studies have reported room-temperature ferromagnetism (FM) in Fe doped SnO 2. The FM in semiconductors due to transition metal doping has been argued to be carrier mediated. Fluorine (F) doping in pure SnO 2 has been reported to significantly increase the carrier concentration. In this work, we investigated the role of F doping in the range from 0% to 0.79% on the FM of chemically synthesized single phase Sn 1-xFe xO 2 using X-ray diffraction, UV-Vis spectrophotometry, particle-induced X-ray emission, particle-induced gamma ray emission and magnetometry. The saturation magnetization M s (0.03 emu/g) increased by a factor of 2.5 and the lattice volume and band gap energy decreased by 0.35 Å 3 and 0.2 eV, respectively, with 0.67% F doping (F/Sn atom %) compared to the sample without any fluorine.
AB - Recent studies have reported room-temperature ferromagnetism (FM) in Fe doped SnO 2. The FM in semiconductors due to transition metal doping has been argued to be carrier mediated. Fluorine (F) doping in pure SnO 2 has been reported to significantly increase the carrier concentration. In this work, we investigated the role of F doping in the range from 0% to 0.79% on the FM of chemically synthesized single phase Sn 1-xFe xO 2 using X-ray diffraction, UV-Vis spectrophotometry, particle-induced X-ray emission, particle-induced gamma ray emission and magnetometry. The saturation magnetization M s (0.03 emu/g) increased by a factor of 2.5 and the lattice volume and band gap energy decreased by 0.35 Å 3 and 0.2 eV, respectively, with 0.67% F doping (F/Sn atom %) compared to the sample without any fluorine.
UR - https://www.scopus.com/pages/publications/34548188541
U2 - 10.1007/s10854-007-9145-4
DO - 10.1007/s10854-007-9145-4
M3 - Article
AN - SCOPUS:34548188541
SN - 0957-4522
VL - 18
SP - 1151
EP - 1155
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 11
ER -