Fluorine doping in dilute magnetic semiconductor Sn 1-x Fe xO 2

Aaron Thurber; Jason Hays; K. M. Reddy; V. Shutthanandan; Alex Punnoose

doi:10.1007/s10854-007-9145-4

Fluorine doping in dilute magnetic semiconductor Sn _1-x Fe _xO ₂

Aaron Thurber
, Jason Hays
, K. M. Reddy
, V. Shutthanandan
, Alex Punnoose

Physics Department

Boise State University
Environmental Molecular Sciences Laboratory

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Recent studies have reported room-temperature ferromagnetism (FM) in Fe doped SnO ₂. The FM in semiconductors due to transition metal doping has been argued to be carrier mediated. Fluorine (F) doping in pure SnO ₂ has been reported to significantly increase the carrier concentration. In this work, we investigated the role of F doping in the range from 0% to 0.79% on the FM of chemically synthesized single phase Sn _1-xFe _xO ₂ using X-ray diffraction, UV-Vis spectrophotometry, particle-induced X-ray emission, particle-induced gamma ray emission and magnetometry. The saturation magnetization M _s (0.03 emu/g) increased by a factor of 2.5 and the lattice volume and band gap energy decreased by 0.35 Å ³ and 0.2 eV, respectively, with 0.67% F doping (F/Sn atom %) compared to the sample without any fluorine.

Original language	English
Pages (from-to)	1151-1155
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	18
Issue number	11
DOIs	https://doi.org/10.1007/s10854-007-9145-4
State	Published - Nov 2007

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@article{5d2726c5d5fe468f89e4c510c22ce284,

title = "Fluorine doping in dilute magnetic semiconductor Sn 1-x Fe xO 2 ",

abstract = "Recent studies have reported room-temperature ferromagnetism (FM) in Fe doped SnO 2. The FM in semiconductors due to transition metal doping has been argued to be carrier mediated. Fluorine (F) doping in pure SnO 2 has been reported to significantly increase the carrier concentration. In this work, we investigated the role of F doping in the range from 0\% to 0.79\% on the FM of chemically synthesized single phase Sn 1-xFe xO 2 using X-ray diffraction, UV-Vis spectrophotometry, particle-induced X-ray emission, particle-induced gamma ray emission and magnetometry. The saturation magnetization M s (0.03 emu/g) increased by a factor of 2.5 and the lattice volume and band gap energy decreased by 0.35 {\AA} 3 and 0.2 eV, respectively, with 0.67\% F doping (F/Sn atom \%) compared to the sample without any fluorine.",

author = "Aaron Thurber and Jason Hays and Reddy, \{K. M.\} and V. Shutthanandan and Alex Punnoose",

year = "2007",

month = nov,

doi = "10.1007/s10854-007-9145-4",

language = "English",

volume = "18",

pages = "1151--1155",

number = "11",

}

TY - JOUR

T1 - Fluorine doping in dilute magnetic semiconductor Sn 1-x Fe xO 2

AU - Thurber, Aaron

AU - Hays, Jason

AU - Reddy, K. M.

AU - Shutthanandan, V.

AU - Punnoose, Alex

PY - 2007/11

Y1 - 2007/11

N2 - Recent studies have reported room-temperature ferromagnetism (FM) in Fe doped SnO 2. The FM in semiconductors due to transition metal doping has been argued to be carrier mediated. Fluorine (F) doping in pure SnO 2 has been reported to significantly increase the carrier concentration. In this work, we investigated the role of F doping in the range from 0% to 0.79% on the FM of chemically synthesized single phase Sn 1-xFe xO 2 using X-ray diffraction, UV-Vis spectrophotometry, particle-induced X-ray emission, particle-induced gamma ray emission and magnetometry. The saturation magnetization M s (0.03 emu/g) increased by a factor of 2.5 and the lattice volume and band gap energy decreased by 0.35 Å 3 and 0.2 eV, respectively, with 0.67% F doping (F/Sn atom %) compared to the sample without any fluorine.

AB - Recent studies have reported room-temperature ferromagnetism (FM) in Fe doped SnO 2. The FM in semiconductors due to transition metal doping has been argued to be carrier mediated. Fluorine (F) doping in pure SnO 2 has been reported to significantly increase the carrier concentration. In this work, we investigated the role of F doping in the range from 0% to 0.79% on the FM of chemically synthesized single phase Sn 1-xFe xO 2 using X-ray diffraction, UV-Vis spectrophotometry, particle-induced X-ray emission, particle-induced gamma ray emission and magnetometry. The saturation magnetization M s (0.03 emu/g) increased by a factor of 2.5 and the lattice volume and band gap energy decreased by 0.35 Å 3 and 0.2 eV, respectively, with 0.67% F doping (F/Sn atom %) compared to the sample without any fluorine.

UR - https://www.scopus.com/pages/publications/34548188541

U2 - 10.1007/s10854-007-9145-4

DO - 10.1007/s10854-007-9145-4

M3 - Article

AN - SCOPUS:34548188541

SN - 0957-4522

VL - 18

SP - 1151

EP - 1155

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 11

ER -

Fluorine doping in dilute magnetic semiconductor Sn _1-x Fe _xO ₂

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