Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy

D. A. Tenne; V. A. Haisler; N. T. Moshegov; A. I. Toropov; A. P. Shebanin; D. R.T. Zahn

doi:10.1007/s100510050702

Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy

D. A. Tenne, V. A. Haisler, N. T. Moshegov, A. I. Toropov, A. P. Shebanin, D. R.T. Zahn

Physics Department

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2 Scopus citations

Abstract

We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder.

Original language	English
Pages (from-to)	371-376
Number of pages	6
Journal	European Physical Journal B
Volume	8
Issue number	3
DOIs	https://doi.org/10.1007/s100510050702
State	Published - Apr 1999

Keywords

63.22.+m Phonons in low-dimensional structures and small particles
78.30.Fs III-V and II-VI semiconductors

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10.1007/s100510050702

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title = "Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy",

abstract = "We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder.",

keywords = "63.22.+m Phonons in low-dimensional structures and small particles, 78.30.Fs III-V and II-VI semiconductors",

author = "Tenne, {D. A.} and Haisler, {V. A.} and Moshegov, {N. T.} and Toropov, {A. I.} and Shebanin, {A. P.} and Zahn, {D. R.T.}",

year = "1999",

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doi = "10.1007/s100510050702",

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TY - JOUR

T1 - Forward Raman scattering in GaAs/AlAs superlattices

T2 - Study of optical phonon anisotropy

AU - Tenne, D. A.

AU - Haisler, V. A.

AU - Moshegov, N. T.

AU - Toropov, A. I.

AU - Shebanin, A. P.

AU - Zahn, D. R.T.

PY - 1999/4

Y1 - 1999/4

N2 - We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder.

AB - We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder.

KW - 63.22.+m Phonons in low-dimensional structures and small particles

KW - 78.30.Fs III-V and II-VI semiconductors

UR - http://www.scopus.com/inward/record.url?scp=0042282131&partnerID=8YFLogxK

U2 - 10.1007/s100510050702

DO - 10.1007/s100510050702

M3 - Article

AN - SCOPUS:0042282131

SN - 1434-6028

VL - 8

SP - 371

EP - 376

JO - European Physical Journal B

JF - European Physical Journal B

IS - 3

ER -

Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy

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