Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy

D. A. Tenne; V. A. Haisler; N. T. Moshegov; A. I. Toropov; A. P. Shebanin; D. R.T. Zahn

doi:10.1007/s100510050702

Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy

D. A. Tenne
, V. A. Haisler
, N. T. Moshegov
, A. I. Toropov
, A. P. Shebanin
, D. R.T. Zahn

Physics Department

Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Geophys. Mineral.
Chemnitz University of Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder.

Original language	English
Pages (from-to)	371-376
Number of pages	6
Journal	European Physical Journal B
Volume	8
Issue number	3
DOIs	https://doi.org/10.1007/s100510050702
State	Published - Apr 1999

Keywords

63.22.+m Phonons in low-dimensional structures and small particles
78.30.Fs III-V and II-VI semiconductors

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10.1007/s100510050702

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@article{b1dc031b81ab4b91914d88d54ba9866b,

title = "Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy",

abstract = "We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder.",

keywords = "63.22.+m Phonons in low-dimensional structures and small particles, 78.30.Fs III-V and II-VI semiconductors",

author = "Tenne, \{D. A.\} and Haisler, \{V. A.\} and Moshegov, \{N. T.\} and Toropov, \{A. I.\} and Shebanin, \{A. P.\} and Zahn, \{D. R.T.\}",

year = "1999",

month = apr,

doi = "10.1007/s100510050702",

language = "English",

volume = "8",

pages = "371--376",

number = "3",

}

TY - JOUR

T1 - Forward Raman scattering in GaAs/AlAs superlattices

T2 - Study of optical phonon anisotropy

AU - Tenne, D. A.

AU - Haisler, V. A.

AU - Moshegov, N. T.

AU - Toropov, A. I.

AU - Shebanin, A. P.

AU - Zahn, D. R.T.

PY - 1999/4

Y1 - 1999/4

N2 - We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder.

AB - We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder.

KW - 63.22.+m Phonons in low-dimensional structures and small particles

KW - 78.30.Fs III-V and II-VI semiconductors

UR - https://www.scopus.com/pages/publications/0042282131

U2 - 10.1007/s100510050702

DO - 10.1007/s100510050702

M3 - Article

AN - SCOPUS:0042282131

SN - 1434-6028

VL - 8

SP - 371

EP - 376

JO - European Physical Journal B

JF - European Physical Journal B

IS - 3

ER -

Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy

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Keywords

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