Gamma Ray Induced Structural Effects in Bare and Ag Doped Ge–S Thin Films for Sensor Application

M. Mitkova; P. Chen; M. Ailavajhala; D. P. Butt; D. A. Tenne; H. J. Barnaby; I. S, Esqueda

doi:10.1016/j.jnoncrysol.2012.12.031

Gamma Ray Induced Structural Effects in Bare and Ag Doped Ge–S Thin Films for Sensor Application

M. Mitkova
, P. Chen
, M. Ailavajhala
, D. P. Butt
, D. A. Tenne
, H. J. Barnaby
, I. S, Esqueda

Arizona State University
Boise State University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We present data on radiation-induced effects in chalcogenide glasses that also trigger radiation induced structural reorganization contributing to silver (Ag) diffusion. To study these effects and silver diffusion, depending on the radiation dose, films were prepared and analyzed using Raman spectroscopy, X-ray diffraction and Energy Dispersion X-ray Spectroscopy. The results show a structural development occurring in films containing 45.4 at.% Ge with increasing radiation dose defined by increase in the edge-sharing/corner-sharing ratio, higher ethane-like unit values and rise of the amount of Ag diffused within the system. Utilizing these effects, a resistance based radiation sensing device has been created. The I–V curves characterizing the sensor operation demonstrate decreased device resistance as a result of the radiation.

Original language	American English
Journal	Journal of Non-Crystalline Solids
DOIs	https://doi.org/10.1016/j.jnoncrysol.2012.12.031
State	Published - 1 Oct 2013

Keywords

chalcogenide glasses
radiation sensing
radiation effects
radiation induced Ag diffusion

EGS Disciplines

Electrical and Computer Engineering

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10.1016/j.jnoncrysol.2012.12.031License: Unspecified

http://dx.doi.org/10.1016/j.jnoncrysol.2012.12.031

Cite this

@article{3753eba73d454873b7f8f0e997432de2,

title = "Gamma Ray Induced Structural Effects in Bare and Ag Doped Ge–S Thin Films for Sensor Application",

abstract = "We present data on radiation-induced effects in chalcogenide glasses that also trigger radiation induced structural reorganization contributing to silver (Ag) diffusion. To study these effects and silver diffusion, depending on the radiation dose, films were prepared and analyzed using Raman spectroscopy, X-ray diffraction and Energy Dispersion X-ray Spectroscopy. The results show a structural development occurring in films containing 45.4 at.\% Ge with increasing radiation dose defined by increase in the edge-sharing/corner-sharing ratio, higher ethane-like unit values and rise of the amount of Ag diffused within the system. Utilizing these effects, a resistance based radiation sensing device has been created. The I–V curves characterizing the sensor operation demonstrate decreased device resistance as a result of the radiation.",

keywords = "chalcogenide glasses, radiation sensing, radiation effects, radiation induced Ag diffusion",

author = "M. Mitkova and P. Chen and M. Ailavajhala and Butt, \{D. P.\} and Tenne, \{D. A.\} and Barnaby, \{H. J.\} and Esqueda, \{I. S,\}",

year = "2013",

month = oct,

day = "1",

doi = "10.1016/j.jnoncrysol.2012.12.031",

language = "American English",

}

TY - JOUR

T1 - Gamma Ray Induced Structural Effects in Bare and Ag Doped Ge–S Thin Films for Sensor Application

AU - Mitkova, M.

AU - Chen, P.

AU - Ailavajhala, M.

AU - Butt, D. P.

AU - Tenne, D. A.

AU - Barnaby, H. J.

AU - Esqueda, I. S,

PY - 2013/10/1

Y1 - 2013/10/1

N2 - We present data on radiation-induced effects in chalcogenide glasses that also trigger radiation induced structural reorganization contributing to silver (Ag) diffusion. To study these effects and silver diffusion, depending on the radiation dose, films were prepared and analyzed using Raman spectroscopy, X-ray diffraction and Energy Dispersion X-ray Spectroscopy. The results show a structural development occurring in films containing 45.4 at.% Ge with increasing radiation dose defined by increase in the edge-sharing/corner-sharing ratio, higher ethane-like unit values and rise of the amount of Ag diffused within the system. Utilizing these effects, a resistance based radiation sensing device has been created. The I–V curves characterizing the sensor operation demonstrate decreased device resistance as a result of the radiation.

AB - We present data on radiation-induced effects in chalcogenide glasses that also trigger radiation induced structural reorganization contributing to silver (Ag) diffusion. To study these effects and silver diffusion, depending on the radiation dose, films were prepared and analyzed using Raman spectroscopy, X-ray diffraction and Energy Dispersion X-ray Spectroscopy. The results show a structural development occurring in films containing 45.4 at.% Ge with increasing radiation dose defined by increase in the edge-sharing/corner-sharing ratio, higher ethane-like unit values and rise of the amount of Ag diffused within the system. Utilizing these effects, a resistance based radiation sensing device has been created. The I–V curves characterizing the sensor operation demonstrate decreased device resistance as a result of the radiation.

KW - chalcogenide glasses

KW - radiation sensing

KW - radiation effects

KW - radiation induced Ag diffusion

UR - https://scholarworks.boisestate.edu/electrical_facpubs/221

UR - http://dx.doi.org/10.1016/j.jnoncrysol.2012.12.031

U2 - 10.1016/j.jnoncrysol.2012.12.031

DO - 10.1016/j.jnoncrysol.2012.12.031

M3 - Article

SN - 0022-3093

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -

Gamma Ray Induced Structural Effects in Bare and Ag Doped Ge–S Thin Films for Sensor Application

Abstract

Keywords

EGS Disciplines

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