Abstract
Silver photodiffusion in thin Ge 30 Se 70 films is investigated in order to understand the structure forming in the Ge-Se host after introduction of Ag in it. Optical micrographs point towards formation of homogeneous films after deposition of the Ge-Se material on glass substrate. This structure changes and occurrence of heterogeneous regions is imaged after Ag is introduced into the Ge-Se host. Raman spectroscopy provides data about the development of the structural organization in the host in depth. It confirms that while the initial non-doped films are organized in a structure corresponding to the bulk material with analogous composition, after Ag photodiffusion, the structure on the interface Ag/Ge 30 Se 70 film is identified as being amorphous Ag 8 GeSe 6 which continuously changes in depth to structure of Ge-rich material. Raman spectra testify that Ag distribution reaches the bottom of the hosting Ge 30 Se 70 films.
| Original language | American English |
|---|---|
| Journal | Journal of Non-Crystalline Solids |
| DOIs | |
| State | Published - 1 May 2008 |
Keywords
- Raman spectroscopy
- chalcogenides
EGS Disciplines
- Electrical and Computer Engineering