High Current Field Emission Arrays for Crossed-Field Device Experiments

Ranajoy Bhattacharya; Mason Canon; Rushmita Bhattacharjee; Winston Chern; Nedeljko Karaulac; Girish Rughoobur; Akintunde I. Akinwande; Jim Browning

High Current Field Emission Arrays for Crossed-Field Device Experiments

Ranajoy Bhattacharya, Mason Canon, Rushmita Bhattacharjee, Winston Chern, Nedeljko Karaulac, Girish Rughoobur, Akintunde I. Akinwande, Jim Browning

Electrical Engineering Department

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single die using a mesh configuration for uniformity and reliability. The I-V characterization shows the devices are capable of producing current up to 5 mA at a gate voltage of 50 V and anode voltage of 200 V. However, after ultra-violet light exposure of 100 minutes, the anode current increases to > 50 mA. This enhancement can be attributed to the residual gas desorption stimulated by UV exposure. Eight such die are being integrated into a planar crossed-field device configuration with plans to use 32 die in a magnetron experiment.

Original language	American English
Title of host publication	2021 34th International Vacuum Nanoelectronics Conference (IVNC)
State	Published - 1 Jan 2021

Keywords

field emitter arrays
logic gates
magnetic devices
reliability engineering
silicon
ultraviolet sources
voltage

EGS Disciplines

Electrical and Computer Engineering

Access to Document

https://doi.org/10.1109/IVNC52431.2021.9600707

Cite this

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title = "High Current Field Emission Arrays for Crossed-Field Device Experiments",

abstract = " Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single die using a mesh configuration for uniformity and reliability. The I-V characterization shows the devices are capable of producing current up to 5 mA at a gate voltage of 50 V and anode voltage of 200 V. However, after ultra-violet light exposure of 100 minutes, the anode current increases to > 50 mA. This enhancement can be attributed to the residual gas desorption stimulated by UV exposure. Eight such die are being integrated into a planar crossed-field device configuration with plans to use 32 die in a magnetron experiment.",

keywords = "field emitter arrays, logic gates, magnetic devices, reliability engineering, silicon, ultraviolet sources, voltage",

author = "Ranajoy Bhattacharya and Mason Canon and Rushmita Bhattacharjee and Winston Chern and Nedeljko Karaulac and Girish Rughoobur and Akinwande, {Akintunde I.} and Jim Browning",

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language = "American English",

booktitle = "2021 34th International Vacuum Nanoelectronics Conference (IVNC)",

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TY - CHAP

T1 - High Current Field Emission Arrays for Crossed-Field Device Experiments

AU - Bhattacharya, Ranajoy

AU - Canon, Mason

AU - Bhattacharjee, Rushmita

AU - Chern, Winston

AU - Karaulac, Nedeljko

AU - Rughoobur, Girish

AU - Akinwande, Akintunde I.

AU - Browning, Jim

PY - 2021/1/1

Y1 - 2021/1/1

N2 - Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single die using a mesh configuration for uniformity and reliability. The I-V characterization shows the devices are capable of producing current up to 5 mA at a gate voltage of 50 V and anode voltage of 200 V. However, after ultra-violet light exposure of 100 minutes, the anode current increases to > 50 mA. This enhancement can be attributed to the residual gas desorption stimulated by UV exposure. Eight such die are being integrated into a planar crossed-field device configuration with plans to use 32 die in a magnetron experiment.

AB - Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single die using a mesh configuration for uniformity and reliability. The I-V characterization shows the devices are capable of producing current up to 5 mA at a gate voltage of 50 V and anode voltage of 200 V. However, after ultra-violet light exposure of 100 minutes, the anode current increases to > 50 mA. This enhancement can be attributed to the residual gas desorption stimulated by UV exposure. Eight such die are being integrated into a planar crossed-field device configuration with plans to use 32 die in a magnetron experiment.

KW - field emitter arrays

KW - logic gates

KW - magnetic devices

KW - reliability engineering

KW - silicon

KW - ultraviolet sources

KW - voltage

UR - https://scholarworks.boisestate.edu/electrical_facpubs/533

UR - https://doi.org/10.1109/IVNC52431.2021.9600707

M3 - Chapter

BT - 2021 34th International Vacuum Nanoelectronics Conference (IVNC)

ER -

High Current Field Emission Arrays for Crossed-Field Device Experiments

Abstract

Keywords

EGS Disciplines

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