High Current Field Emission Arrays for Crossed-Field Device Experiments

Ranajoy Bhattacharya; Mason Cannon; Rushmita Bhattacharjee; Winston Chern; Nedeljko Karaulac; Girish Rughoobur; Akintunde I. Akinwande; Jim Browning

doi:10.1109/IVNC52431.2021.9600707

High Current Field Emission Arrays for Crossed-Field Device Experiments

Ranajoy Bhattacharya, Mason Cannon, Rushmita Bhattacharjee, Winston Chern, Nedeljko Karaulac, Girish Rughoobur, Akintunde I. Akinwande, Jim Browning

Electrical Engineering Department

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single die using a mesh configuration for uniformity and reliability. The I-V characterization shows the devices are capable of producing current up to 5 mA at a gate voltage of 50 V and anode voltage of 200 V. However, after ultra-violet light exposure of 100 minutes, the anode current increases to > 50 mA. This enhancement can be attributed to the residual gas desorption stimulated by UV exposure. Eight such die are being integrated into a planar crossed-field device configuration with plans to use 32 die in a magnetron experiment.

Original language	English
Title of host publication	2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021
Editors	Stephen Purcell, Jean-Paul Mazellier
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665425896
DOIs	https://doi.org/10.1109/IVNC52431.2021.9600707
State	Published - 2021
Event	34th International Vacuum Nanoelectronics Conference, IVNC 2021 - Virtual, Lyon, France Duration: 5 Jul 2021 → 9 Jul 2021

Publication series

Name	2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021

Conference

Conference	34th International Vacuum Nanoelectronics Conference, IVNC 2021
Country/Territory	France
City	Virtual, Lyon
Period	5/07/21 → 9/07/21

Access to Document

10.1109/IVNC52431.2021.9600707

Cite this

Bhattacharya, R., Cannon, M., Bhattacharjee, R., Chern, W., Karaulac, N., Rughoobur, G., Akinwande, A. I., & Browning, J. (2021). High Current Field Emission Arrays for Crossed-Field Device Experiments. In S. Purcell, & J.-P. Mazellier (Eds.), 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021 (2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC52431.2021.9600707

Bhattacharya, Ranajoy ; Cannon, Mason ; Bhattacharjee, Rushmita et al. / High Current Field Emission Arrays for Crossed-Field Device Experiments. 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021. editor / Stephen Purcell ; Jean-Paul Mazellier. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021).

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title = "High Current Field Emission Arrays for Crossed-Field Device Experiments",

abstract = "Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single die using a mesh configuration for uniformity and reliability. The I-V characterization shows the devices are capable of producing current up to 5 mA at a gate voltage of 50 V and anode voltage of 200 V. However, after ultra-violet light exposure of 100 minutes, the anode current increases to > 50 mA. This enhancement can be attributed to the residual gas desorption stimulated by UV exposure. Eight such die are being integrated into a planar crossed-field device configuration with plans to use 32 die in a magnetron experiment.",

author = "Ranajoy Bhattacharya and Mason Cannon and Rushmita Bhattacharjee and Winston Chern and Nedeljko Karaulac and Girish Rughoobur and Akinwande, {Akintunde I.} and Jim Browning",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 34th International Vacuum Nanoelectronics Conference, IVNC 2021 ; Conference date: 05-07-2021 Through 09-07-2021",

year = "2021",

doi = "10.1109/IVNC52431.2021.9600707",

language = "English",

series = "2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Bhattacharya, R, Cannon, M, Bhattacharjee, R, Chern, W, Karaulac, N, Rughoobur, G, Akinwande, AI & Browning, J 2021, High Current Field Emission Arrays for Crossed-Field Device Experiments. in S Purcell & J-P Mazellier (eds), 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021. 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021, Institute of Electrical and Electronics Engineers Inc., 34th International Vacuum Nanoelectronics Conference, IVNC 2021, Virtual, Lyon, France, 5/07/21. https://doi.org/10.1109/IVNC52431.2021.9600707

High Current Field Emission Arrays for Crossed-Field Device Experiments. / Bhattacharya, Ranajoy; Cannon, Mason; Bhattacharjee, Rushmita et al.
2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021. ed. / Stephen Purcell; Jean-Paul Mazellier. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - High Current Field Emission Arrays for Crossed-Field Device Experiments

AU - Bhattacharya, Ranajoy

AU - Cannon, Mason

AU - Bhattacharjee, Rushmita

AU - Chern, Winston

AU - Karaulac, Nedeljko

AU - Rughoobur, Girish

AU - Akinwande, Akintunde I.

AU - Browning, Jim

PY - 2021

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N2 - Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single die using a mesh configuration for uniformity and reliability. The I-V characterization shows the devices are capable of producing current up to 5 mA at a gate voltage of 50 V and anode voltage of 200 V. However, after ultra-violet light exposure of 100 minutes, the anode current increases to > 50 mA. This enhancement can be attributed to the residual gas desorption stimulated by UV exposure. Eight such die are being integrated into a planar crossed-field device configuration with plans to use 32 die in a magnetron experiment.

AB - Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single die using a mesh configuration for uniformity and reliability. The I-V characterization shows the devices are capable of producing current up to 5 mA at a gate voltage of 50 V and anode voltage of 200 V. However, after ultra-violet light exposure of 100 minutes, the anode current increases to > 50 mA. This enhancement can be attributed to the residual gas desorption stimulated by UV exposure. Eight such die are being integrated into a planar crossed-field device configuration with plans to use 32 die in a magnetron experiment.

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BT - 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021

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Bhattacharya R, Cannon M, Bhattacharjee R, Chern W, Karaulac N, Rughoobur G et al. High Current Field Emission Arrays for Crossed-Field Device Experiments. In Purcell S, Mazellier JP, editors, 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021). doi: 10.1109/IVNC52431.2021.9600707

High Current Field Emission Arrays for Crossed-Field Device Experiments

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